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FHP45N20W

Release time：2022-10-20 13:45:43

Industry generic name：IRFB38N20D, etc.Wait

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  • In view of the high efficiency, low distortion and EMI characteristics of the power amplifier system, the FHP45N20W adopts the planar process VDMOS and optimizes Rdson, Qg, trr and other parameters on the premise of excellent impact resistance, thus being widely adapted to be used in Class-D power amplifier circuits, such as automobile power amplifier and DSP power amplifier. Alternative models: IRFB38N20D, etc.

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Product Parameters

Part Number Polarity Package Vgs（±V） VTH（V） ID(A) BVdss(V) Rds（on）(Ω)
Model Polarity Encapsulation form Vgs=10v
(typ)		 Vgs=10v
(max)
FHP45N20W
N
TO-220
30
2～4
45
200
0.044
0.051

Product Details

【Product Type】 

N-channel Plane MOSFET


【Product Introduction】

 In terms of high efficiency, low distortion and EMI characteristics for power amplifier systems, FHP45N20W adopts the plane process VDMOS, optimizes Rdson, Qg, trr and other parameters under the premise of excellent impact resistance, thus widely suitable for use in Class-D power amplifiers, such as car amplifiers and DSP amplifiers.


【Product Features】

100% EAS test, 100% DVDS test, high EAS avalanche energy, good consistency, high reliability, strong impact resistance.



【Application Examples】


FHP45N20W is used in half-bridge and full-bridge circuits in audio amplification circuits.





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