Substitute IPP030N10N3G_Feihong Semiconductor

09 20 2024

130N10A FET replacement IRFB4410 model for photovoltaic 24V inverter!

Photovoltaic inverters can convert direct current (DC) generated by photovoltaic solar panels into alternating current (AC). In applications, photovoltaic inverters have many different input voltage specifications, including 12V, 24V, 48V, etc.

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04 06 2025

Rise of Domestic SGTMOSFET: How does 250N1F2A replace Infineon IPP030N10N3G?

With the continuous breakthrough of domestic semiconductor technology, Feihong Semiconductor's SGTMOSFET 250N1F2A has become an ideal alternative to Infineon IPP030N10N3G with its low on-resistance, high reliability and excellent cost performance. This article discusses the key points of MOSFET selection and analyzes how 250N1F2A helps achieve high-efficiency design in the application scenario of solar inverters.

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10 19 2024

Substitute IPP030N10N3G model parameters and can enhance the reliability of DC/DC converter domestic MOS tube!

A domestic 100V, 250A MOS tube is suitable for DC/DC converter in high frequency inverter and improves the reliability of the product. It is believed that the above description is a problem that inverter design engineers often want to understand.

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10 15 2024

Substitutable STP150N10F7 FET, 100V, 172A parameters can make the vehicle inverter safer.

In the era of new energy, car inverters are not just a simple function of traditional mobile phone charging. Customers have developed from simple mobile phones to computers, hair dryers, rice cookers, fans and other household appliances. For the functional diversification of vehicle inverters, manufacturers must also choose better domestic field effect tubes to replace STP150N10F7 field effect tubes.

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02 26 2025

Why can FHS110N8F5B take the place of IPP052N08N5?

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10 19 2024

Circuit New Trend: Can the domestic alternative of FHS170N8F3A low-voltage MOS tube be IPP037N08N3G?

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11 18 2024

The secret of replacing the domestic MOSFET model FHS170N8F3A with the IPP037N08N3G parameter

For electronic technicians dealing with BMS protection boards for 13-17 strings, when replacing the MOSFET model IPP037N08N3G, special attention must be paid to several key details. The first is the performance parameters of the MOSFET, such as whether the rated current can reach 185A, whether the rated voltage can reach 85V, etc. The aforementioned parameters have an obvious interrelationship with the device's work efficiency.

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12 29 2024

FHA250N1F2A medium and low voltage MOSFET, the national force to compete with the foreign brand Infineon IPP030N10N3G

When the sine wave inverter electronic designer selects the Infineon IPP030N10N3G medium and low voltage MOSFET model, he should pay attention to its performance parameters, such as whether the rated current can reach 250A, whether the rated voltage can reach 100V, etc. The above indicators are directly related to the working efficiency of the sine wave inverter circuit. What's more, the fast recovery and tail current connected in parallel in reverse are also the top priorities.

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03 29 2025

FHP4310V

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09 20 2024

Cost-effectiveness analysis of easy replacement IPP037N08N3G, FHA170N8F3AMOS transistor

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11 23 2024

Ideal substitute: Comprehensive technical evaluation of domestic FHP170N8F3A mosfet tube

At present, the situation that the MOS tube products face difficulties such as brand reputation decline and low reliability is closely related to the reliable operation of online UPS equipment. Therefore, it is important to select a better MOS tube for replacement.

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12 16 2024

Ideal substitute: Comprehensive technical evaluation of the domestic FHS200N4F3AMOS tube

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09 17 2024

Domestic精品, the FHP200N4F3A MOSFET has performance媲美 the foreign model IPP041N04NG.

In order to optimize the power switch performance of PV energy storage power supply circuit, Flyhong Semiconductor strongly recommends using the FHP200N4F3A model MOSFET. This MOSFET with a rated current of 200A and a rated voltage of 40V can effectively overcome the difficulties such as product electromagnetic noise, low efficiency, poor safety benefits, etc.

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03 29 2025

FHP180N08V

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09 23 2024

Pure domestic premium product, FHP170N1F4A high power SGTMOSFET媲美 international model IPP045N10N3G in excellent performance.

In practical cases, FHP170N1F4A has successfully achieved domestic substitution of IPP045N10N3G in most domestic inverter manufacturers and can be used on a large scale. Everyone who knows its detailed parameters is highly recommended to:

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02 11 2025

Ideal substitute: Comprehensive technical evaluation of domestic FHA75T65AIGBT

For the electronic engineer of the massager frequency changer, many key aspects should be taken seriously when replacing the Fairchild FGH75N65SHDT IGBT model. The first is the performance parameters of the IGBT, such as whether the rated current reaches 75A, whether the voltage reaches 650V, etc. The above parameters are closely related to the working efficiency of the device.

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10 01 2024

Low-voltage SGTMOSFET circuit performance upgrade - FHP60N1F10A and IPP126N10N3G performance domestic replacement

In order to enhance the conversion current performance of DC/DC power circuit, Fonhill Semiconductor is willing to recommend the selection of FHP60N1F10A. This low voltage SGTMOSFET with a rated current of 60A and a rated voltage of 100V can solve the problems of product reliability degradation, efficiency reduction and poor heat dissipation.

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12 06 2024

Domestic MOS tube new release: FHP230N06V seamless replacement CS160N06, HY3906P, IRFB7537PBF parameters!

Introduction of new domestic MOS tube products: FHP230N06V models can be used in high-frequency inverters, power frequency inverters, outdoor energy storage power supplies, motor controllers, UPS uninterruptible power supplies, high-frequency switching power supplies and other product circuits at the application end.

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10 20 2024

FHA170N1F4AMOSFET, domestic quality alternative to the international HYG045N10NS1P model

Dear Engineer Dai, I hope to find a domestic MOSFET factory to produce and sell the MOSFET of model FHA170N1F4A for use in the switch transformer, so as to achieve the replacement application of the MOSFET.

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12 04 2024

Let your synchronous rectification circuit be more stable, and the FHA170N8F3A low-voltage MOSFET can replace IPP037N08N3G.

The low-voltage MOSFET products in the market often have common contradictions such as efficiency degradation, shortened service life and poor heat dissipation. These core tasks are closely related to the normal state of synchronous rectification circuit equipment. For this reason, it is important to provide stable and high-quality low-voltage MOSFETs for those who occupy an important position in the market.

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