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FHP35N20W

Release time：2022-09-06 16:53:59

Industry generic name：IRFB31N20D, etc.Wait

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  • In view of the high efficiency, low distortion and EMI characteristics of the power amplifier system, the FHP35N20W adopts the planar process VDMOS and optimizes Rdson, Qg, trr and other parameters on the premise of excellent impact resistance, thus being widely adapted to be used in Class-D power amplifier circuits, such as automobile power amplifier and DSP power amplifier. Other MOS tube brand alternative models: IRFB31N20D, etc.

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Product Parameters

Part Number Polarity Package Vgs（±V） VTH（V） ID(A) BVdss(V) Rds（on）(Ω)
Model Polarity Encapsulation form Vgs=10v
(typ)		 Vgs=10v
(max)
FHP35N20W
N
TO-220
30
2～4
35
200
0.069
0.08

Product Details

【Product Type】

N-channel Plane MOSFET



【Product Description】

      For high efficiency, low distortion and EMI characteristics of the amplifier system, FHP35N20W adopts the plane process VDMOS, optimizes parameters such as Rdson, Qg, trr, etc. under the premise of excellent impact resistance, so it is widely suitable for use on Class-D amplifier circuits, such as car amplifiers, DSP amplifiers, etc.


【Product Features】

     100% EAS test, 100% DVDS test, high EAS avalanche energy, good consistency, high reliability, strong impact resistance.



【Application Examples】




      FHP35N20W is used in half-bridge and full-bridge circuits of audio amplification circuits.


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