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IGBT single tube selection number parameter book_domestic high power IGBT manufacturer_feihong semiconductor

IGBT(Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite full-control voltage-driven power semiconductor device composed of (Bipolar Junction Transistor,BJT) bipolar transistor and insulated gate field effect Semiconductor (MOS).

IGBT has the advantages of both the high input impedance of metal-oxide-Semiconductor field-effect Transistor (MOSFET) and the low conduction voltage drop of power Transistor (Giant transistor, GTR). The GTR saturation voltage is reduced, the current-carrying density is large, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current-carrying density is small. IGBT combines the advantages of the above two devices, the driving power is small and the saturation voltage is reduced.

Therefore, IGBT is very suitable for application in DC voltage of 600V and above converter systems such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. The IGBT products manufactured by Feihong Semiconductor are finally fed back to the market for application after a series of reliability studies.
Encapsulation form：
  • Encapsulation form 
  • VGE(th)(V) 
  • IC-100℃(A) 
  • BVCES(V) 
  • VCESAT(V) 
  • VF(V) 
  • application circuit 
  • Application Products 
  • End Products 
Total 6 product

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Feihong Semiconductor has provided one-stop MOS tube solutions for enterprises in the field of 10000 electronics. | e-mail : feihongbcok@gmail.com
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