MOS tube parameter model application information_IGBT | FET circuit information

FHS100N8F6A and STP110N8F6, n-channel enhancement SGTMOSFET parameter in-depth interpretation

The quality problems of the n-channel enhancement SGTMOSFET, such as poor safety benefits, low efficiency, electromagnetic noise, etc. often affect the normal operation of the 13-series lithium battery protection board. Therefore, it is very important to find a high-quality replacement product of the n-channel enhancement SGTMOSFET.

Number of page views：419 Time of publication：2024-12-14

How to correctly select the voltage endurance IGBT single tube in electronic procurement? Case analysis of FHA25T120A

For designers in the field of power cutters, selecting the IGBT discrete product with pressure resistance, FHA25T120A, is just like selecting a perfect professional solution that matches all technical parameters of NGTB25N120FL2WG. Please pay close attention to the detailed parameters:

Number of page views：435 Time of publication：2024-12-14

How to select the manufacturers of n-channel enhancement mode field effect transistors in Sichuan Province, which are commonly used in medium and low pressure?

As described: Technician Luo plans to explore domestic n-channel enhancement mode field effect transistor manufacturers to supply the FHP170N1F4A model n-channel enhancement mode field effect transistor for electric cleaning vehicles, achieving the substitution use of Magna field effect transistors. In this way, the inquiry is made to the n-channel enhancement mode field effect transistor manufacturer of Feihong Semiconductor, intending to provide a procurement plan for domestic n-channel enhancement mode field effect transistors suitable for electric cleaning vehicles. After understanding the situation, the Feihong Semiconductor n-channel enhancement mode field effect transistor manufacturer immediately instructed the team to rely on Miss Luo's needs.

Number of page views：391 Time of publication：2024-12-14

MOS tube electric vehicle controller, recommendation of domestic MOS tube models for electric vehicle controllers

The pure domestic FHP170N1F4A model can be commonly used in electric vehicle controllers. Fei Hong Semiconductor, the manufacturer of MOSFETs, provides robust component supply guarantees for electronic manufacturers such as fat tire electric bicycles, MOSFET common gate circuits, rice cookers, multi-level inverter circuits, etc. For more information, you can also search for "Fei Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

Number of page views：491 Time of publication：2024-12-14

Looking for a field-effect transistor of outdoor energy storage power supply with stable performance? The reason for considering FHS200N4F3A is the parameters!

Liugong is looking for domestic MOSFET replacements for the IPP041N04NG MOSFET. They are eager to find a MOSFET with excellent quality, capable of handling 200A and 40V.

Number of page views：535 Time of publication：2024-12-13

Cost-saving and efficiency-enhancing, domestic FHA25T120A high-voltage IGBT tube is the preferred option for cost performance.

The origin of improving the performance of angle grinder circuit is the conversion current capability. The high voltage IGBT tube of FHA25T120A type from FHE semiconductor with its powerful parameters of 25A and 1200V ensures to solve the problems of low reliability, poor safety efficiency and efficiency drop of products.

Number of page views：499 Time of publication：2024-12-13

How to select low on-resistance field effect transistor agents for micro electric vehicle controllers?

The FHP120N9F4A model product has the characteristics of low RDSon, which is very suitable for use in the controller of mini electric vehicles. Importantly, customers have a very high recognition of the low on-resistance FHP120N9F4A model field effect transistor. It is a rare all-star product of low on-resistance field effect transistors! Finally, Tonghua Feihong Semiconductor successfully solved Ms. Si's supply demand for low on-resistance field effect transistors through its agency. After sampling, Ms. Si explained the reason for choosing Feihong Semiconductor: she hoped to enhance the switch driving capability of the mini electric vehicle controller. Feihong Semiconductor solved Ms. Si's needs, so she chose the FHP120N9F4A model field effect transistor.

Number of page views：294 Time of publication：2024-12-13

How to select the MOS for the supply of fat tire electric bicycle electric vehicle controller, common MOS for fat tire electric bicycle electric vehicle controller supply?

The FHP120N9F4A model product has the characteristics of 100% Rg test and low loss, which is very suitable for use in the controller of fat tire electric bicycles. Importantly, the FHP120N9F4A model mos controls robustly and reliably in the controller of fat tire electric bicycles. Finally, the Sichuan Province Feihong Semiconductor MOS manufacturer successfully fulfilled Miss Qu's MOS supply needs. After testing the sample, Miss Qu explained her choice of Feihong Semiconductor: she planned to increase the switching capability of the controller of fat tire electric bicycles. Feihong Semiconductor solved Miss Qu's needs, so she chose the FHP120N9F4A model MOS.

Number of page views：539 Time of publication：2024-12-13

Comparison Analysis: Pure Domestic FHD100N8F6A Medium and Low Voltage SGTMOSFET Domestic Replacement for International Model STP110N8F6

The common disadvantages of the medium and low voltage SGTMOSFET market in today's world are electromagnetic interference, weak reliability, poor heat dissipation, etc. These disadvantages not only seriously hinder the normal operation of the BMS protection board, but also lead to maintenance costs. For this reason, the focus is on the domestic replacement products of flawless quality medium and low voltage SGTMOSFET.

Number of page views：375 Time of publication：2024-12-12

The innovation of the circuit for outdoor emergency power supply, how should the domestic FHA40T65A model with high voltage tolerance IGBT become an outstanding one?

With the rapid advancement of technology, insulated gate bipolar transistor has slowly evolved into an essential factor required by various industries. The demand for high-voltage IGBT, a device that can meet flexible current control and adjustment, is continuously rising in fields such as outdoor emergency power supply and variable frequency drives. When designing the circuit of an outdoor emergency power supply, it is necessary to select a good-quality domestic high-voltage IGBT device to replace the FGH40N60SFD model.

Number of page views：401 Time of publication：2024-12-12

How to choose Jiangxi Province MOS tube controller braking control circuit, and Jiangxi Province MOS tube manufacturer for direct sale of high power?

Find and organize domestic high-power MOSFETs suitable for controller braking control circuits, whose parameters such as voltage endurance, gate type, N-channel enhancement type, etc., can replace Infineon MOSFET products. Considering Miss Zhao's situation in Jiangxi Province, it is recommended to use the FHP100N8F6A high-power MOSFET for the controller braking control circuit.

Number of page views：449 Time of publication：2024-12-12

Which is the best manufacturer of electric wheelchair electric vehicle controller mos?

The FHP130N1F5A model product features: 100% Rg testing, high reliability, 100% EAS testing, making it very suitable for use in electric wheelchair motor controllers. Importantly, the FHP130N1F5A model MOSFET has a long service life and better quality MOSFETs! Ultimately, the MOSFET manufacturer of Changde City Feihong Semiconductor successfully met Miss Qiu's MOSFET supply needs. After sampling, Miss Qiu explained her decision to choose Feihong Semiconductor: she intended to find the FHP130N1F5A model MOSFET in Changde City to enhance the performance of electric wheelchair motor controllers. The responsible person of the electric wheelchair motor controller manufacturer in Changde City, Miss Qiu, decided on Feihong Semiconductor due to its excellent service.

Number of page views：438 Time of publication：2024-12-12

Domestic premium low-voltage SGTMOSFET, FHD100N8F6A, analysis for motor drive circuit

echo "Hello, world!";

Number of page views：380 Time of publication：2024-12-11

High quality and low price, FHA60T65A high-voltage IGBT challenges the global brand Fairchild FGH60N60SMD.

Number of page views：439 Time of publication：2024-12-11

Zhangjiakou mos controller supply, recommended models of mos controller supply

Arrange the domestic MOS that is just in place and suitable for the controller to use, and the product can replace the MOS of Xina in terms of parameters such as high frequency, avalanche energy, resistance, etc. Combining with the real situation of Miss Hui from Zhangjiakou, the MOS of FHP110N8F5B is recommended for the controller.

Number of page views：469 Time of publication：2024-12-11

Which is a good MOSFET agent for the domestic controller drive and high-pressure MOSFET agent?

The FHP100N08C model of domestic products can be commonly used in controller drives. Feihong Semiconductor MOSFET distributors are sincere to provide the most cost-effective component supply guarantee for electronic manufacturers such as mountain electric bicycles, MOSFET dynamic load circuits, plasma cutters, air conditioners, etc. For more information, you can also search "Feihong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

Number of page views：341 Time of publication：2024-12-11

Master the selection skills of medium and low pressure MOSFET: why can FHP100N8F6A with 120A current handle the switch power supply circuit?

For the adoption of STP110N8F6 type medium and low voltage MOSFET in switch power supply electronic engineering, technicians need to focus on its performance parameters, such as whether the rated current can reach 120A, whether the rated voltage can reach 85V, etc. The parameters involved directly determine the working efficiency of the switch power supply circuit. Next, the breakdown voltage of the device and Vcesat saturation voltage drop are also key factors to be considered.

Number of page views：530 Time of publication：2024-12-10

The revolution of electronic industry, the parameter performance and application of FHA25T120A high-voltage IGBT

When the online interactive UPS electronic designer picks the ON Semiconductor NGTB25N120FL2WG high voltage IGBT for replacement, several key indicators need to be taken seriously. First of all, the performance parameters of the high voltage IGBT are important, such as whether the current can reach 25A, whether the rated voltage can reach 1200V, etc., and the description parameters are closely related to the device's work efficiency. Additionally, the package type and thermal resistance (Rth(j-c)) are also important indicators.

Number of page views：615 Time of publication：2024-12-10

MOS controller, MOS selection recommendation for dedicated controllers

According to the description: the folding electric bicycle manufacturer used to use PImos brand for its product circuit. Now, it intends to require domestic MOS manufacturers to supply FHP170N1F4A MOS for replacing PImos in the controller. In this case, Feihong MOS manufacturer is consulted for a procurement solution of domestic MOS suitable for the controller. After understanding the situation, Feihong Semiconductor MOS manufacturer immediately dispatches a team to meet Mr. Yin's demand.

Number of page views：407 Time of publication：2024-12-10

FHP120N9F4ASGTMOSFET: Make it easy to replace the SVG095R0NT in the electric bicycle controller circuit design.

Feihong Semiconductor is willing to strongly promote the use of the FHP120N9F4A model SGTMOSFET to enhance the current conversion capability of electric bicycle controller circuits. This SGTMOSFET, with a rated parameter of 147A and 97V, meets the practical need to solve problems such as poor product heat dissipation, shortened product life, and electromagnetic interference.

Number of page views：443 Time of publication：2024-12-09

MOS tube parameter model application information_IGBT | FET circuit information_feihong semiconductor