The core characteristics of the BMS protection board are medium and low voltage SGTMOSFETs, which can directly affect the circuit stability. How should one select medium and low voltage SGTMOSFETs to make them suitable for BMS protection board circuits? The common disadvantages of medium and low voltage SGTMOSFETs in the current market include electromagnetic interference, weak reliability, and poor heat dissipation effects. These disadvantages not only seriously hinder the normal operation of the BMS protection board but also lead to maintenance costs. For this reason, the focus is on selecting flawless quality medium and low voltage SGTMOSFET domestic alternative products. When electronic engineers of the BMS protection board use the domestic alternative STP110N8F6 model medium and low voltage SGTMOSFET, they need to consider many important factors. For example, the performance parameters of the medium and low voltage SGTMOSFET: whether the rated current reaches 120A, whether the voltage reaches 85V, etc., all these are closely related to the device's work efficiency. In addition to the above, the rise rate of current and short-circuit capacity (ShortCircuitCapability) are also key points of concern. The BMS protection board manufacturer uses the STP110N8F6 model SGTMOSFET in its product circuit. Considering the current actual situation, it is necessary to seek a pure domestic medium and low voltage SGTMOSFET factory to supply the FHD100N8F6A model medium and low voltage SGTMOSFET for replacing the STP110N8F6 model SGTMOSFET in the BMS protection board. 1. Maximum pulse current: 320A 2. Maximum gate-source voltage: ±20V 3. Fast switching capability 4. Current of 120A, voltage of 85V 5. Static on-resistance RDS(ON): 5.3mΩ (Typ), 6.5mΩ (Max) 6. Threshold voltage VGS(th): 2.0-4.0V 7. N-channel field-effect transistor For this reason, to enhance the conversion current capability of the BMS protection board circuit, Feihong Semiconductor recommends choosing the FHD100N8F6A model medium and low voltage SGTMOSFET. The 120A, 85V medium and low voltage SGTMOSFET can resolve problems such as product electromagnetic interference, weak reliability, and poor heat dissipation in real time. Electronic product development like BMS protection boards is no longer difficult with the FHD100N8F6A model medium and low voltage SGTMOSFET from Feihong Semiconductor providing immediate solutions for switch power supplies and portable energy storage power supplies. Stable component supply, call 400-831-6077 now to experience the service!