After autumn, winter is coming. Every year at this time is the peak sales season for four-wheel electric vehicles. Why? Because for the elderly, compared with two-wheel electric vehicles, driving a four-wheel electric vehicle in winter can resist both wind and rain. Therefore, the production of four-wheel electric vehicle manufacturers will enter a peak period.

Four-wheel electric vehicles are mainly composed of four major components: controllers, motors, batteries, chargers, and the vehicle body. Among these, motor control is the key to improving product quality. What kind of MOSFET models are commonly used for motor control in domestic four-wheel electric vehicles?

In fact, domestically, there is already a low-voltage MOSFET model FHL300N1F2A whose parameters can often replace IPT020N10N5 for motor control in four-wheel electric vehicles, thereby enhancing product quality.

Firstly, the FHL300N1F2A MOSFET model is produced by a MOSFET manufacturer that has been dedicated to research and development for 20 years domestically. Its excellent manufacturing process and parameter performance make it better suited for motor control in four-wheel electric vehicles, optimizing the overall machine control efficiency.

The core of MOSFET replacement lies in parameter performance. Why does the domestic FHL300N1F2A field-effect transistor say it can better replace the foreign IPT020N10N5 model parameters for use in four-wheel electric vehicle motor control?

Let's take a look at the specific product parameters of Fei Hong's FHL300N1F2A: 300A current, 100V voltage, RDS(on) = 2.0mΩ(MAX) @VGS = 10V, RDS(on) = 1.6mΩ(TYP) @VGS = 10V, maximum gate-source voltage @VGS = ±20V.

FHL300N1F2A is an N-channel enhancement mode field effect transistor. The FHL series uses the TOLL-8L package form, which has characteristics such as low internal resistance, low parasitic inductance, small size, and low thermal resistance.

This product also has specific parameter values: VGS(th): 2.0-4.0V; Vgs(±V): 20; ID(A): 300A; BVdss(V): 100V.

Static on-resistance (typ): 1.6mΩ, maximum pulse drain current (IDM): 1200(A), reverse transfer capacitance: 328pF.

In the process of domestic field-effect transistor substitution, the Fei Hong native model FHL300N1F2A parameters can be used to replace the IPT020N10N5 model, and it has the following features:

1. 100% EAS test

2. 100% DVDS thermal resistance test (lower thermal resistance, excellent temperature rise performance)

3. Industrial-grade reliability: small package inductance, excellent EMI characteristics and reliability.

4. 100% Rg test

5. Low on-resistance: supports smaller impedance and larger peak current.

It is more suitable for industrial applications, so it is widely used in high-power density application scenarios such as four-wheel electric vehicles, electric motorcycles, lithium battery protection, communication power supplies, etc.; MOSFET brand replacement model: IPT020N10N5.

The use of 100V, 300A MOSFETs requires careful selection of models. Fei Hong Semiconductor's MOSFETs have been widely applied in motor control, power circuits, smart home appliances, new energy electronics fields: such as automotive electronics, electric bicycles, intelligent audio equipment, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing high-quality products and supporting services for domestic electronic product manufacturers. In addition to providing free samples, we can also customize MOSFET products according to customer needs. Simply search for "Fei Hong Semiconductor" on Baidu to find us. Free sample hotline: 400-831-6077.