As an efficient rectifier device, synchronous rectification MOSFETs are applied in various scenarios such as power adapters, DC voltage stabilizers, electric vehicle charging piles, etc. Compared with diode rectifier circuits, it is more stable, efficient, and controllable.

Since the synchronous rectifier MOSFET can achieve high-efficiency rectification and provide a stable DC output, choosing a high-quality domestic MOS tube that can replace the parameters of the IPT020N10N5 model is very important.

Since the efficiency is so good, what are the high-quality MOS tubes available domestically? Besides the IPT020N10N5 parameter model on the market, we choose the FHL300N1F2A field-effect transistor from Fei Hong Semiconductor.

Why? Because the FHL300N1F2A field-effect transistor has the following characteristics:

1. Low on-resistance: supports smaller impedance and larger peak current.

2. 100% EAS test

3. 100% DVDS thermal resistance test (lower thermal resistance, excellent temperature rise performance)

4. 100% Rg test

5. Industrial-grade reliability: small package inductance, excellent EMI characteristics and reliability.

From the above description, it can be known that this industrial-grade FHL300N1F2A field-effect transistor model with 300A current, 100V voltage is very suitable for use in synchronous rectifier circuits.

Of course, in the application of synchronous rectification, our power engineers must understand the detailed parameters of this high-quality FHL300N1F2A domestic field-effect transistor: it has a current and voltage of 300A and 100V respectively, RDS(on) = 2.0mΩ(MAX) @VGS = 10V, RDS(on) =1.6mΩ(TYP) @VGS = 10V, maximum gate-source voltage @VGS =±20V.

FHL300N1F2A is an N-channel enhancement-mode field-effect transistor. The FHL series adopts the TOLL-8L package shape, and its packaged products have features such as low package resistance, small size, low thermal resistance, and low parasitic inductance.

The specific parameters of FHL300N1F2A are: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 300A; BVdss(V): 100V.

Static on-resistance (typ): 1.6mΩ, maximum pulse drain current (IDM): 1200(A), reverse transfer capacitance: 328pF.

If you are considering converting the traditional diode rectifier circuit into a synchronous rectifier MOSFET circuit, and want to prioritize domestic products, it is recommended to select the high-quality FHL300N1F2A field-effect transistor to replace the IPT020N10N5 parameter model for use in the synchronous rectifier circuit.

When replacing the 100V, 300A MOSFET, selecting the right model is crucial. The MOSFETs from Fei Hong Semiconductor are not only widely used in synchronous rectifier circuits but also applicable in new energy electric vehicles, audio amplifiers, UPS, and other end-use applications. They provide high-quality products and services to domestic electronic product manufacturers. In addition to providing free samples, they can also customize MOSFET products according to customer needs. You can find us by searching "Fei Hong Semiconductor" on Baidu. Free sample hotline: 400-831-6077.