In today's rapidly developing electronics industry, inverters serve as critical components where their performance and reliability directly impact the overall system efficiency. With increasing market demand for efficient and stable power solutions, selecting an appropriate MOSFET has become a significant challenge for engineers and procurement personnel. Fei Hong Semiconductor's 80N07 MOSFET, with its outstanding performance and stable supply, has become an ideal replacement for STP80NF07F4, particularly excelling in the inverter power supply sector. ### Outstanding Performance of the 80N07 MOSFET The Fei Hong 80N07 MOSFET adopts advanced TrenchMOSFET technology, featuring low gate charge and low Crss characteristics, enabling fast switching and significantly enhancing the conversion efficiency of inverter power supplies. It boasts a maximum drain-to-source DC voltage (VDS) of 68V, with continuous drain current (ID) reaching up to 80A at 25°C, maintaining stable performance even under high-temperature conditions. Additionally, the 80N07 undergoes 100% avalanche testing and exhibits high dv/dt capability, ensuring reliability in complex working environments. ### Perfect Replacement for STP80NF07F4 For engineers and procurement personnel currently using STP80NF07F4, the Fei Hong 80N07 offers a seamless alternative solution. Both devices are highly consistent in electrical parameters and package forms, with the 80N07 demonstrating superior conduction and dynamic characteristics. For instance, the static on-resistance (RDS(ON)) of the 80N07 is 7~8.5mΩ at VGS=10V and ID=40A, offering lower conduction losses compared to STP80NF07F4, further enhancing the efficiency of inverter power supplies. ### Application Advantages in Inverter Power Supplies In inverter power supply applications, the low gate charge and rapid switching characteristics of the 80N07 MOSFET effectively reduce switching losses and improve power conversion efficiency. Its high dv/dt capability ensures stability in high-voltage, high-frequency operating environments, preventing device failure due to voltage fluctuations. Moreover, the junction-to-case thermal resistance (Rth(j-c)) of the 80N07 is only 1.3℃/W, exhibiting excellent heat dissipation performance, making it suitable for long-term high-power operation. ### Time-Limited Discount to Support Efficient Power Management To thank our valued customers, Fei Hong Semiconductor is offering a special time-limited discount promotion. Purchasing the 80N07 MOSFET now grants you an exceptional discount, with the opportunity to receive free samples. We commit to providing a stable supply cycle and comprehensive technical support to ensure smooth production progress. ### Conclusion As one of China's key packaging bases for high-power MOSFETs, Fei Hong Semiconductor consistently provides high-quality semiconductor devices to customers. The 80N07 MOSFET, with its superior performance and stable supply, has become an ideal choice for inverter power supplies. Take action immediately by searching "Fei Hong Semiconductor" on Baidu or calling the free sample hotline: 400-831-6077, to learn more about the product and enjoy the time-limited discount, elevating your power management to new heights.