On August 29, Huawei's new Mate 60 Pro smartphone went on sale quietly, marking another step forward for China's semiconductor industry towards top-tier capabilities. This achievement is not only due to the continuous technical iteration and climbing spirit of domestic semiconductor companies but also thanks to the recognition of the quality of domestic products by various electronic manufacturers and consumers.

In fact, in many fields, domestic products are no longer inferior to foreign ones. For instance, in the field of communication power supplies, the FHL300N1F2A MOSFET can already replace the IPT020N10N5 model parameters for application.

This domestically produced MOSFET product has been stably used by numerous domestic electronic manufacturers. Therefore, Feihong Semiconductor suggests that if you want to enhance the quality and cost-effectiveness of your communication power supply, the MOSFET model parameter substitution of IPT020N10N5 with FHL300N1F2A is recommended.

Why? Because the FHL300N1F2A model field-effect transistor has the following characteristics:

1. Low on-resistance: supports smaller impedance and larger peak current.

2. 100% EAS test

3. 100% DVDS thermal resistance test (lower thermal resistance, resulting in excellent temperature rise performance)

4. 100% Rg test

5. Industrial-grade reliable performance: small package inductance, resulting in excellent EMI characteristics and reliability.

From the above characteristics, it is known that this industrial-grade FHL300N1F2A field-effect transistor model parameter with a current of 300A and voltage of 100V is very suitable for use in communication power supply circuits.

Of course, during application, our power supply development engineers must understand the detailed parameters of this high-quality FHL300N1F2A domestic field-effect transistor: it has a current and voltage of 300A and 100V respectively, RDS(on) = 2.0mΩ(MAX) @VGS = 10V, RDS(on) = 1.6mΩ(TYP) @VGS = 10V, maximum gate-source voltage @VGS = ±20V.

FHL300N1F2A is an N-channel enhancement-mode field-effect transistor. The FHL series uses the TOLL-8L package form, and its packaged products have features such as small size, low parasitic inductance, low internal resistance, and low thermal resistance.

The specific parameter values of this product are: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 300A; BVdss(V): 100V.

Reverse transfer capacitance: 328pF, static on-resistance (typ): 1.6mΩ, maximum pulse drain current (IDM): 1200A.

Returning to the aforementioned issue, the path of domestic semiconductors is undoubtedly the future of enhancing product cost-effectiveness, with the core being the use of high-quality FHL300N1F2A field-effect transistors to replace IPT020N10N5 parameter models for communication power supply circuits.

The replacement of 100V, 300A MOSFETs is crucial to select the right model. Feihong Semiconductor's MOSFETs are not only widely applied in communication power supplies but can also be used in terminal applications such as new energy electric vehicles, audio amplifiers, UPS, etc., providing high-quality products and services to domestic electronic product manufacturers. In addition to offering free samples, we can also customize MOSFET products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us. Free sample hotline: 400-831-6077.