In China, Baseus, Green Link, Anker Digital, Pisen and other brands are major manufacturers of PD power supplies. How can small manufacturers continuously improve their product quality to compete with these big brands?

When it comes to PD power supplies, it is still necessary to consider choosing good MOSFETs for application. The commonly seen IPT020N10N5 model in the market can be used for PD power supplies. For the domestic industrial chain, what models can PD power supply manufacturers use as alternatives?

For PD power supplies, how to select a high-quality MOSFET in the developed power circuit can make the product more stable? In addition to excellent product parameters, the ability to provide stable and continuous supply is also very important.

For a MOSFET with a current rating of 300A and a voltage rating of 100V, it can be well used in PD power supplies. In the market, there is a product that can provide continuous supply, which is FHL300N1F2A. It is a domestically produced MOSFET that can replace the IPT020N10N5 MOSFET.

Its parameters allow it to replace the IPT020N10N5 model parameters, making the PD power supply safer. It is produced by a MOSFET manufacturer that has been dedicated to research and development for 20 years domestically. As a source manufacturer of MOSFET products, it can replace the parameters of the IPT020N10N5 MOSFET.

Nowadays, after decades of development in the electronics industry in China, high-quality domestic FHL300N1F2A MOSFETs can already be well substituted for the IPT020N10N5 model parameters in PD power supplies. Why?

From the product application parameters, we can see some clues. The specific product parameters of Feihong's FHL300N1F2A include a current of 300A and a voltage of 100V, RDS(on) = 2.0mΩ(MAX) @VGS = 10V, RDS(on) =1.6mΩ(TYP) @VGS = 10V, and maximum gate-source voltage @VGS =±20V.

FHL300N1F2A is an N-channel enhancement mode field effect transistor. The FHL series adopts the TOLL-8L package form, which has the characteristics of small size, low thermal resistance, low internal package resistance, and low parasitic inductance.

This product also has specific parameter values: Vgs (±V): 20; VGS (th): 2.0-4.0V; ID (A): 300A; BVdss (V): 100V.

Static on-resistance (typ): 1.6mΩ, maximum pulse drain current (IDM): 1200 (A), reverse transfer capacitance: 328pF.

In the process of replacing PD power supply field effect transistors with domestic products, Feihong's domestic model: FHL300N1F2A model parameters can replace IPT020N10N5 model parameters. Its industrial-grade product features allow it to be widely used in high-power density applications such as electric bicycles, electric motorcycles, electric sightseeing vehicles, lithium battery protection, communication power supplies, etc.; MOS tube brand replacement model: IPT020N10N5.

The replacement of 100V, 300A MOSFETs is very important to choose the right model parameters. Feihong has obtained 15 utility patents and inventions and has collaborated with Sun Yat-sen University and the Chinese Academy of Sciences to develop GaN devices. Feihong's products have been widely applied in PD power supplies, DC/DC converters, BLDC motor drives, helping partners solve domestic high-quality products that meet national conditions and international quality standards. In addition to providing free samples, we can also customize MOSFET products according to customer needs. Just enter "Feihong Semiconductor" on Baidu to find us. Free trial hotline: 400-831-6077.