The Battery Management System (BMS) can be divided into different types according to its application and function, common BMS types: standalone BMS, integrated BMS, advanced BMS, distributed BMS, centralized BMS, modular BMS, etc.; each type of BMS will have different applications.

The only similarity is that the battery management system (BMS) all need to use high-quality MOSFETs to control and protect battery equipment. Currently, the relatively good IPT020N10N5 low-voltage MOS model abroad is often used in the battery management system (BMS), so can we find a better replacement model domestically?

Carrying this question, today I would like to share the model parameters of FHL300N1F2A, a domestic low-voltage MOSFET. Why is it said that it can often replace IPT020N10N5 for use in the battery management system BMS.

It is worth noting that the FHL300N1F2A MOSFET model is produced by a MOSFET manufacturer in the country that has been dedicated to research and development for 20 years. Its good manufacturing process and parameter performance can better adapt to the battery management system BMS and the MOS charge-discharge protection function.

The core of MOSFET substitution lies in parameter performance. What are the advantages of the FHL300N1F2A domestic field effect transistor in replacing the foreign IPT020N10N5 model parameters in the battery management system BMS?

And see the specific product parameters of this FHL300N1F2A from Feihong: 300A, 100V current and voltage, RDS(on) = 2.0mΩ(MAX) @VGS = 10 V, RDS(on) =1.6mΩ(TYP) @VGS = 10 V, maximum gate-source voltage @VGS =±20 V.

FHL300N1F2A is an N-channel enhancement-mode field-effect transistor, and the FHL series adopts the TOLL-8L package form. The packaged products have the characteristics of small size, low internal resistance, low parasitic inductance, and low thermal resistance.

This product also has specific parameter values: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 300A; BVdss(V): 100V.

Static on-resistance (typ): 1.6mΩ, maximum pulse drain current (IDM): 1200(A), reverse transfer capacitance: 328pF.

In the process of domestication of field effect transistors, the Feihong domestic model: FHL300N1F2A model parameters can replace the IPT020N10N5 model, and it has the following features:

1. Low on-resistance: supports smaller impedance and larger peak current.

2. 100% EAS test

3. 100% DVDS thermal resistance test (lower thermal resistance, excellent temperature rise performance)

4. 100% Rg test

5. Industrial-grade reliability: small package inductance, excellent EMI characteristics and reliability.

The FHL300N1F2A product performs excellently in terms of stability and durability in various application scenarios such as electric bicycles, electric motorcycles, and electric sightseeing vehicles. In addition, it is widely used in high-power density application fields such as lithium battery protection and communication power supplies.

The use of a 100V, 300A MOSFET requires selecting the right model. Feihong Semiconductor's MOSFETs have been widely applied in power circuits, smart home appliances, new energy electronics industries: such as automotive electronics, electric vehicles, smart audio, household appliances, LED lighting, chargers, computer power supplies, etc., providing high-quality products and supporting services for domestic electronic product manufacturers. In addition to providing free samples, they can also customize MOSFET products according to customer needs. You can find us by searching "Feihong Semiconductor" on Baidu, and the free sample hotline is 400-831-6077.