The development of the energy storage industry is growing every year, especially under the influence of the Russia-Ukraine conflict. In order to solve electricity demand, overseas civilians began purchasing household energy storage products, and the market in Europe has shown significant growth. Therefore, for enterprises going abroad, it is essential to focus on improving their own products, which naturally includes using good MOS tubes as the foundation for circuit research and development.

For energy storage products, the battery management system is also an important part. So, which styles of MOS tubes are commonly used in battery management systems?

Can a better replacement model be found domestically for the foreign FDBL86066 low-voltage MOS model? The answer is yes, because with the domestic battery industry already quite advanced, there is naturally a self-contained supply chain.

With this question in mind, let's take a look at the model parameters of the domestically produced low-voltage MOS tube FHL170N1F4A and why it is said that it can often replace FDBL86066 for use in battery management systems (BMS).

Firstly, the FHL170N1F4A MOS tube model is produced by a domestic MOS tube manufacturer that has been dedicated to research and development for 20 years. Its excellent manufacturing process and parameter performance make it better suited for battery management systems (BMS), providing charge and discharge protection functions for batteries.

When replacing MOS tubes, the core focus should be on parameter performance. Why is it said that the FHL170N1F4A native field-effect transistor can effectively replace the foreign FDBL86066 model parameters for use in battery management systems (BMS)?

Let’s take a look at the specific product parameters of Feihong’s FHL170N1F4A: 172A current, 100V voltage, RDS(on) = 4.0mΩ(MAX) @VGS = 10 V, RDS(on) = 3.2mΩ(TYP) @VGS = 10 V, maximum gate-source voltage @VGS = ±20 V.

FHL170N1F4A is an N-channel enhancement-mode field-effect transistor. The FHL series uses the TOLL-8L package form, with features such as small size, low internal resistance, low parasitic inductance, and low thermal resistance.

This product has specific parameter values: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 172A; BVdss(V): 100V.

Maximum pulse drain current (IDM): 480A, static on-resistance (typ): 3.2mΩ, reverse transfer capacitance: 33pF.

During the process of replacing native field-effect transistors, the Feihong native model FHL170N1F4A parameters can replace the FDBL86066 model, with the following characteristics:

1. Low conduction internal resistance: supports smaller impedance and larger peak current.

2. 100% EAS test

3. 100% DVDS thermal resistance test (lower thermal resistance, resulting in excellent temperature rise performance)

4. 100% Rg test

5. Industrial-grade reliability: small package inductance, resulting in excellent EMI characteristics and reliability.

It is more suitable for industrial applications, thus widely used in high-power density application scenarios such as electric bicycles, electric motorcycles, electric sightseeing vehicles, lithium battery protection, communication power supplies, etc.; MOS tube brand replacement model: FDBL86066.

The selection of 100V, 172A MOS tubes for replacement is very important. Feihong Semiconductor’s MOS tubes have been widely applied in power circuits, smart home appliances, new energy electronics sectors: such as automotive electronics, electric bikes, smart audio equipment, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing quality products and supporting services to domestic electronic product manufacturers. In addition to offering free samples, we can also customize MOS tube products according to customer needs. Simply search "Feihong Semiconductor" on Baidu to find us, and our free sample hotline is 400-831-6077.