In PD (Power Delivery) power supplies, the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) mainly plays the role of a switch and current regulator. Therefore, when developing PD power supplies, it is recommended to choose high-quality field-effect transistors for application. What model can be used as an alternative to the commonly available FDBL86066 model?

For PD power supplies, how can one select a high-quality MOSFET in the development of the power circuit to make the product more stable? Besides excellent product parameters, the ability to supply stably over time is also very important.

For a MOSFET with 172A current and 100V voltage parameters, it can be well used in PD power supplies. In the market, products that can continue to supply include the FHL170N1F4A product, which is a domestic MOSFET that can replace the FDBL86066 field-effect transistor.

Among its parameters, it determines its ability to replace the FDBL86066 model parameters, making the PD power supply safer. It is produced by a domestic MOSFET manufacturer with 20 years of research and development. As a source manufacturer of MOSFETs, its products can replace the FDBL86066 model parameters for field-effect transistors.

Nowadays, after decades of development in China's electronics industry, the high-quality domestic FHL170N1F4A field-effect transistor has been able to effectively replace the FDBL86066 model parameters in PD power supplies. Why?

Let's take a look at the specific product parameters of this Feihong FHL170N1F4A product, which has a current of 172A and a voltage of 100V, RDS(on) = 4.0mΩ(MAX) @VGS = 10V, RDS(on) = 3.2mΩ(TYP) @VGS = 10V, and a maximum gate-source voltage @VGS = ±20V.

The FHL170N1F4A is an N-channel enhancement mode field effect transistor, and the FHL series adopts the TOLL-8L package form. Its packaged product features small size, low internal resistance, low parasitic inductance, and low thermal resistance.

This product also has specific parameter values: Vgs (±V): 20; VGS (th): 2.0-4.0V; ID (A): 172A; BVdss (V): 100V.

Maximum pulse drain current (IDM): 480(A), static on-resistance (typ): 3.2mΩ, reverse transfer capacitance: 33pF.

During the process of replacing domestic field-effect transistors, the Feihong domestic model FHL170N1F4A parameters are used to replace the FDBL86066 model. Its industrial-grade product features allow it to be widely used in high-power density applications such as electric bicycles, electric motorcycles, electric sightseeing vehicles, lithium battery protection, communication power supplies, etc.; mos tube brand replacement model: FDBL86066.

When replacing a 100V, 172A MOSFET, selecting the right model parameters is crucial. Feihong has obtained 15 utility patents and inventions and cooperates with Sun Yat-sen University and the Chinese Academy of Sciences to develop GaN devices. Feihong products have already been widely applied in PD power supplies, DC/DC converters, BLDC motor drives, helping partners solve domestic high-quality products that meet national conditions and international quality standards. In addition to providing free samples, we can also customize MOSFET products according to customer needs. Just search "Feihong Semiconductor" on Baidu to find us, and the free sample hotline is 400-831-6077.