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2025 domestic MOS tube new products: FHP160N06V seamless replacement HY3606P, IRFB3306PbF model parameters

Article Category:Featured Articles Release time:2025-01-04 Number of page views:504 Share:

The trench process, with its deep and narrow trench structure, high precision etching and filling, vertical structure integration, and strong compatibility, can meet the needs of most electronic devices for high performance, high density, and high reliability, and is widely used in inverters, synchronous rectification, motor control, and other fields.

 

In 2025, Feihong Semiconductor launched a new product, the FHP160N06V MOS tube model. This product not only has the above characteristics but also features extremely low on-resistance, allowing it to seamlessly replace HY3606P and IRFB3306PbF field effect transistors.

 

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FHP160N06V, as an N-channel enhancement-mode field-effect transistor, adopts advanced trench technology, which reduces conduction losses while improving avalanche energy and switching performance.

 

This transistor can be used in various power switch circuits. Its product form is TO-220 packaging, complying with the JEDEC standard. It meets environmental protection requirements such as RoHS and REACH standards, and is halogen-free and environmentally friendly.

 

The following will introduce the product characteristics of FHP160N06V, comparative parameters with competitors, recommended application range, and some typical characteristic curves:

 

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I. Product Features

(1)100% EAS test.

(2)100% Rg test.

(3)100% DVDS instantaneous thermal resistance test.

(4)Adopting refined classification of Vth further improves the consistency of the product.

(5)By adopting the unique trench process and excellent BOM materials, the product has high reliability and fast switching speed.

(6)It has extremely low on-resistance RDS(on) and excellent quality factor FOM(RDS(on)*Qg).

(7)High avalanche tolerance and strong impact resistance.

 

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II. Comparison with Competitors' Parameters

1FHP160N06V compared withHY3606P has lower on-resistance, reducing conduction loss and improving the quality factorFOM(RDSON*Qg), making theMOS tube performance better.

2FHP160N06V compared withIRFB3306PbF reduces conduction loss and has more advantages in terms of performance and price when considering domestic products.

 

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III. Recommended Application Range

1Suitable for full-bridge topology frequency converter applications.

2Suitable for 24-36V BLDC motor drive controllers.

3Suitable for UPS uninterruptible power supply powered by 24V batteries.

4Suitable for synchronous rectification in high-power high-frequency switch power supplies.

5High-frequency inverter applications: DC/DC push-pull topology boost circuit in vehicle-borne high-frequency inverters with 12V battery input.

6Suitable for outdoor energy storage power supplies paired with 5-series lithium iron phosphate battery packs, using them in the DC-DC push-pull topology boost circuit of the inverter module.

 

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IV. Some Typical Characteristic Curves

 

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For products that are often used in inverters, synchronous rectification, motor control, and other fields, it is recommended to take a closer look at this high-quality domesticMOS tube. The launch of the new FHP160N06V product provides electronic manufacturers with a choice of products with lower on-resistance and higher性价比 field effect transistors.

 

Feihong Semiconductor is dedicated to the research, development, production, and sales of high-power discrete devices, integrated circuits, and power semiconductors. It provides manufacturers with sustainable and stable supply. With over 35 years of experience in the semiconductor industry and 20 years of research and manufacturing experience, free samples are available upon request, and customizedMOS tube products can be provided according to customer needs.

 

Enter "Feihong Semiconductor" directly into Baidu to find us. Free trial hotline:400-831-6077.

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