The core of the BMS (Battery Management System) includes MOS switches, fuses, control ICs, NTC thermistors, TVS transient voltage suppressors, capacitors, and memory devices. Among them, the MOS field-effect transistor controls the conduction and cutoff of the charging circuit and discharging circuit.

It can be seen that the field-effect transistor plays a crucial role in the BMS. In the new energy era, whether it is electric vehicles or forklifts, etc., all need to use the BMS.

Therefore, how to select an appropriate MOS transistor for the BMS has become a test for manufacturers. This article will analyze what type of MOS tube should be used in the battery management system circuit to replace the SVG095R0NT field-effect transistor and obtain a product with equivalent performance or even more stability?

Why replace the SVG095R0NT field-effect transistor? Because this is a product that was previously used more frequently in battery management systems. In the development of domestic semiconductor products, there is now a MOS transistor with parameters of 97V voltage and 147A current, which is more suitable for use in battery management systems.

Due to its parameters, it was determined to replace the parameters of the SVG095R0NT model, making the battery management system safer and more stable. Moreover, it is produced by a MOS transistor manufacturer that has been dedicated to research and development for 20 years domestically. As a source factory for MOS transistors, its products can replace the field-effect transistors of the SVG095R0NT model.

Of course, electronic engineers must thoroughly understand the product parameters. Let's take a look at the specific product parameters of Feihong's 120N9F4A:

With a current of 147A and a voltage of 97V, RDS(on) = 5.4mΩ(MAX) @VGS = 10 V, RDS(on) =4.8mΩ(TYP) @VGS = 10 V, and maximum gate-source voltage @VGS =±20 V.

The 120N9F4A is an N-channel enhancement-mode field-effect transistor, available in two packages: TO-220 and TO-263, offering diverse packaging forms and broader application ranges.

This product also has specific parameter values: Vgs(±V): 20; VGS(th): 2.2-3.8V; ID(A): 147A; BVdss(V): 97V.

Maximum pulse drain current (IDM): 480(A), reverse transfer capacitance: 23pF.

The 120N9F4A is an N-channel enhancement-mode field-effect transistor, with two package options: TO-220 and TO-263. Its diverse packaging forms make it applicable in a wider range of scenarios.

This product also has specific parameter values: Vgs(±V): 20; VGS(th): 2.2-3.8V; ID(A): 147A; BVdss(V): 97V.

Maximum pulse drain current (IDM): 480(A), reverse transfer capacitance: 23pF.

In the new energy era, allowing one's own battery management system to stand out and gain more applications is recommended. Choose the domestic model from Feihong: the 120N9F4A parameters to replace the SVG095R0NT model for application. Due to its product features using SGT technology, it can be widely used in battery management systems, DC-DC converters, synchronous rectification, motor drives, inverters, 24V-72V input battery management systems, and other application scenarios.

Using a 147A, 97V MOS transistor for replacement, selecting the right model parameters allows enterprises to enhance their product capabilities. Feihong has obtained 15 utility patents and inventions and has collaborated with Sun Yat-sen University and the Chinese Academy of Sciences to develop GaN devices. Feihong's products are already widely used in battery management systems, inverters, UPS, photovoltaic inverters, DC-AC inverters, helping partners solve high-quality domestic products that meet national conditions and international quality standards. In addition to providing free samples, we can also customize MOS tube products according to customer needs. Simply search "Feihong Semiconductor" on Baidu to find us. Free sample hotline: 400-831-6077.