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500V, 94A parameter mos tube is suitable for 1800W dual channel power amplifier, recommend FHK94N50A FET!

Article Category:Featured Articles Release time:2023-12-29 Number of page views:1420 Share:

2023 is an important year for the recovery and growth of performing arts, with the number of concerts worldwide increasing by 30% in just the first half of the year. This means it will drive upstream and downstream industries, with stage audio power amplifiers being a core growth point. How can manufacturers of stage audio power amplifiers seize the recovering market share?

In addition to market work, the key is to upgrade and iterate on their own stage products. This article will provide detailed pairing recommendations based on the 1800W dual-channel amplifier model:

First, we need to understand the FHK94N50A field-effect transistor model. It is compatible with the original imported IXFK94N50P2 model in static parameters, with comparable temperature rise and truly achieving domestic replacement.

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As mentioned above, the FHK94N50A field-effect transistor has gained market recognition because of its perfect parameters for use in 1800W dual-channel amplifiers. In addition to the basic 94A, 500V parameters, it also has excellent product features:

1. Low on-resistance and low Qg

2. High dv/dt capability

3. 100% EAS tested, high avalanche withstand capability, strong impact resistance

4. 100% DVDS thermal resistance tested, good heat dissipation performance

5. 100% Rg tested

6. High testing standards, 100% testing of all parameters + VTH classification, good parameter consistency

7. High reliability

8. Integrated fast recovery reverse diode

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Of course, in addition to the excellent characteristics of the product, the FHK94N50A can replace the IXFK94N50P2 high-voltage MOS tube model due to its excellent parameters:

1. N-channel enhancement type VDMOS-with frd

2. TO-264 packaging size suitable for circuit

3. Vgs(±V): 30; VGS(th): 3.0-5.0V;

4. ID(A): 94A; BVdss(V): 500V

5. Maximum pulse drain current (IDM): 376A

6. Reverse transfer capacitance: 58pF

7. Static on-resistance RDS(on) = 65mΩ(MAX) @VGS = 10V, RDS(on) =47mΩ(TYP) @VGS = 10V

The parameters of the above products have been validated through market applications. In addition to this product being able to directly replace the IXFK94N50P2, engineers from Feihong Semiconductor suggest that the entire circuit requires four FHK94N50A field-effect transistors paired with eight FHA60F60CA models, TO-247-2L packaged field-effect transistors for optimal results.

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Feihong Semiconductor provides professional products and one-stop service for power devices to electronic manufacturers, always starting from user needs.

Its excellent manufacturing process and parameter performance better adapt to the 1800W dual-channel amplifier, ensuring product reliability.

With the rapid iteration of the market and technological advancements, selecting the right model is crucial. Feihong Semiconductor's MOSFETs are widely used in power circuits, smart home appliances, new energy electronics sectors: such as automotive electronics, electric vehicles, smart audio equipment, household appliances, LED lighting, chargers, computer power supplies, etc., providing high-quality products and supporting services to domestic electronic product manufacturers. In addition to free samples, they can also customize MOSFET products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us, and the free sample hotline is 400-831-6077.

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