According to the announcement of the National Intellectual Property Office, Zhuhai Gree Electric Appliances Co., Ltd. has applied for a patent titled "A Protection Device, Method and Electric Vehicle for a Flyback Switching Power Supply," with publication number CN117220516A. Through this application, it can be seen that although switching power supplies are very common electronic products, their technology is still continuously improving.

The market progresses with continuous technological advancement. Therefore, how should switch power supply R&D engineers choose high-quality MOS tube manufacturers to continuously optimize the performance of field effect transistors, bipolar junction transistors, IGBTs, and other power semiconductor devices?

Today, we will use a high-quality MOS tube, the 120N9F4A model field effect transistor, to answer questions for power supply R&D engineers. Just as Gree constantly conducts patent research in combination with its own product needs, Feihong Semiconductor's product engineers also continuously communicate with our partners to optimize and improve products.

For instance, this 120N9F4A model MOS tube has undergone continuous iteration through market applications, enabling it to replace the low-voltage MOS tube model SVG095R0NT abroad for use in switching power supplies.

Why is the 120N9F4A model field effect transistor recognized when used in switching power supplies? In addition to its parameters being a 147A, 97V MOS tube, it also has excellent product features:

1. Wide BV voltage range

2. Fast switching capability

3. Excellent short-circuit resistance

4. Low gate charge, low Crss (typical value pF)

5. 100% tested for Rg

6. 100% tested for avalanche

7. 100% tested for thermal resistance

8. RoHS compliant product

Of course, apart from the excellent features of the product, the 120N9F4A can replace the SVG095R0NT low-voltage MOS tube model due to its excellent parameters:

1. N-channel enhancement-mode field-effect transistor

2. Various packaging forms such as TO-220 and TO-263, providing a wider range of applications

3. Vgs(±V): 20; VGS(th): 2.2-3.8V;

4. ID(A): 147A; BVdss(V): 97V

5. Maximum pulse drain current (IDM): 480A

6. Reverse transfer capacitance: 23pF

7. Static on-resistance RDS(on) = 5.4mΩ(MAX) @VGS = 10V, RDS(on) = 4.8mΩ(TYP) @VGS = 10V

All the above product parameters have been verified through market applications. For more details about the 120N9F4A model parameters, please refer to the detailed product specification sheet. The 120N9F4A model MOS tube is produced by a domestic MOS tube manufacturer that has been dedicated to research and development for 20 years. Its excellent manufacturing process and parameter performance make it better suited for switching power supplies, ensuring product reliability.

Due to its adoption of SGT technology to achieve extremely low RDSON conduction resistance, and its production standards being extremely strict, it is widely used in various applications such as switching power supplies, synchronous rectification, motor drives, inverters, battery management systems, 24V-72V input electric vehicle controllers, etc.; MOS tube brand replacement models include SVG095R0NT.

With rapid market iteration and technological improvement, choosing the right model is crucial. Feihong Semiconductor's MOS tubes have been widely applied in power circuits, smart home appliances, new energy electronics sectors: such as automotive electronics, electric bicycles, intelligent audio equipment, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing quality products and supporting services to domestic electronic product manufacturers. In addition to free sample provision, we can also customize MOS tube products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us, and our free sample hotline is 400-831-6077.