The Battery Management System (BMS), as one of the central products in the energy storage industry, is an essential focus for electronic engineers when it comes to MOSFETs with parameters like 385A and 100V. After all, MOSFETs with these parameters are frequently used in battery management systems, primarily due to their ability to effectively regulate current and voltage.

In the past, the battery management system industry often used foreign models like IPT015N10N5 as low-voltage MOSFETs. For domestic manufacturers that have confidence in their products and have been using them for a long time, they generally give positive evaluations to the FHL385N1F1A model field-effect transistor. After all, building a stable and cost-effective semiconductor supply chain is one of the core competitive advantages for domestic electronics manufacturers.

Why does the use of the FHL385N1F1A model field-effect transistor in the Battery Management System (BMS) receive recognition? Besides being a MOSFET with the 385A and 100V parameters, it also has excellent product features:

1. Low on-resistance: Allows the product to support smaller impedance and larger peak currents.

2. 100% EAS testing, providing data reference for product reliability

3. 100% DVDS thermal resistance test (lower thermal resistance results in excellent temperature rise performance)

4. 100% Rg testing, verifying product stability

5. Industrial-grade reliable performance: Small package inductance, resulting in outstanding EMI characteristics and reliability.

Of course, in addition to the excellent features of the product, the FHL385N1F1A can replace the IPT015N10N5 low-voltage MOSFET model because it also has excellent parameters:

1. N-channel enhancement-mode field-effect transistor

2. The FHL series adopts the TOLL-8L package form (characterized by small size, low internal resistance, low parasitic inductance, and low thermal resistance)

3. Vgs (±V): 20; VGS (th): 2.0-4.0V;

4. ID (A): 385A; BVdss (V): 100V

5. Static on-resistance (typ): 1.3mΩ

6. Maximum pulse leakage current (IDM): 1540A

7. Reverse transfer capacitance: 940pF

8. RDS(on) = 1.5mΩ(MAX) @VGS = 10 V, RDS(on) =1.3mΩ(TYP) @VGS = 10 V

Of course, the above only lists some of the product parameters, more detailed specifications for the FHL385N1F1A model can be found in the product specification sheet. The FHL385N1F1A model MOSFET is produced by a domestic MOSFET manufacturer that has been dedicated to research and development for 20 years. Its excellent manufacturing process and parameter performance make it better suited for the battery management system BMS and provide discharge protection functions.

Due to its industrial-grade MOSFET characteristics, it is widely used in high-power density applications such as battery management systems (BMS), PD power supplies, synchronous rectification, 72V battery motor control for electric motorcycles, four-wheel electric sightseeing vehicles, lithium battery protection, communication power supplies, etc.; MOSFET brand replacement models: IPT015N10N5.

The substitution of 100V and 385A MOSFETs is important to select the right model. The MOSFETs from Feihong Semiconductor have been widely applied in power circuits, smart home appliances, new energy electronics fields: such as automotive electronics, electric bikes, smart speakers, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing high-quality products and supporting services for domestic electronic product manufacturers. In addition to offering free samples, we can also customize MOSFET products according to customer needs. You can find us by simply searching "Feihong Semiconductor" on Baidu, and our free sample hotline is 400-831-6077.