Against the background of global electric vehicle popularization, combined with the report "Status and Future Development Trend of Global and Chinese Electric Motorcycle Market 2021-2027": The global electric motorcycle market size is expected to reach 69.3 billion yuan in 2026, with an annual growth rate of 6.5%. According to estimates, China's motorcycle production will reach 22.5 million units in 2027, of which the proportion of electric motorcycles will increase to 30%.

From the data and trends, it can be known that the future of electric motorcycles will continue to improve, among which 2000W electric motorcycles are also the main products. How can manufacturers specializing in developing motor controllers help electric motorcycle manufacturers improve product quality? They must focus on the core component MOSFETs.

After all, MOSFETs are an important part of the motor control system for 2000W electric motorcycles. Which styles of MOSFETs are commonly used in 72V motor controllers?

Can a good replacement model for the foreign FDBL86066 low-voltage MOS model be found domestically? In fact, domestically, there is already a low-voltage MOS tube model FHL170N1F4A whose parameters can often replace FDBL86066 for use in 2000W electric motorcycle motor control.

Firstly, the FHL170N1F4A MOSFET model is produced by a domestic MOSFET manufacturer with 20 years of experience. Its excellent manufacturing process and parameter performance make it better suited for 2000W electric motorcycle motor controllers, optimizing overall machine control efficiency. The best application is within 72V motor controllers.

When replacing MOSFETs, the core focus should be on parameter performance. Why is it said that the domestic FHL170N1F4A field-effect transistor can be a good substitute for the foreign FDBL86066 model in 2000W electric motorcycle motor control?

Let's take a look at the specific product parameters of this Fei Hong FHL170N1F4A model: 172A, 100V current and voltage, RDS(on) = 4.0mΩ(MAX) @VGS = 10 V, RDS(on) =3.2mΩ(TYP) @VGS = 10 V, maximum gate-source voltage @VGS =±20 V.

The FHL170N1F4A is an N-channel enhancement-mode field-effect transistor, with the FHL series adopting the TOLL-8L package form, featuring low internal package resistance, low parasitic inductance, small size, and low thermal resistance.

This product has specific parameter values: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 172A; BVdss(V): 100V.

Maximum pulse drain current (IDM): 480A, static on-resistance (typ): 3.2mΩ, reverse transfer capacitance: 33pF.

In the process of domesticating field-effect transistor substitution, the Fei Hong domestic model FHL170N1F4A parameters are used to substitute the FDBL86066 model, and it has the following characteristics:

1. Industrial-grade reliability: small package inductance, excellent EMI characteristics and reliability.

2. 100% EAS test

3. 100% DVDS thermal resistance test (lower thermal resistance, excellent temperature rise performance)

4. 100% Rg test

5. Low on-resistance: supports smaller impedance and larger peak current.

It is more suitable for industrial applications, thus widely used in high-power density application scenarios such as 2000W electric motorcycles, electric sightseeing vehicles, lithium battery protection, communication power supplies, etc.; MOS tube brand replacement model: FDBL86066.

The use of a 100V, 172A MOSFET requires selecting the right model. Fei Hong Semiconductor's MOSFETs have been widely applied in motor control, power circuits, smart home appliances, new energy electronics fields: such as automotive electronics, electric scooters, smart audio equipment, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing high-quality products and supporting services to domestic electronic product manufacturers. In addition to offering free samples, they can also customize MOSFET products according to customer needs. Simply search for "Fei Hong Semiconductor" on Baidu to find us. Free sample hotline: 400-831-6077.