In the charging market, PD power supplies are continuously eroding the marketing share of traditional power adapters with their product advantages, especially more obviously in the mobile phone and computer ends. So how should PD power supply manufacturers continuously improve their product competitiveness?

This article will provide suggestions from the perspective of semiconductor component usage in products. Is there a suitable and replaceable product for IPT015N10N5 MOSFET in PD power supplies?

In fact, in the domestic market, there is already a MOSFET with a current rating of 385A and a voltage parameter of 100V that is more suitable for use in PD power supplies. Products that can be continuously supplied on the market include FHL385N1F1A, which is a domestic MOSFET that can replace the IPT015N10N5 MOSFET.

Due to its parameters, it is determined that it can replace the IPT015N10N5 model parameters, making PD power supplies safer. It is produced by a domestic MOSFET manufacturer with 20 years of focus on research and development. As a source factory of MOSFETs, its products can replace the parameters of the IPT015N10N5 model MOSFET.

Of course, electronic engineers must thoroughly understand the parameters of the product. Let's take a look at the specific product parameters of this FHL385N1F1A from Feihong:

It has a current of 385A and a voltage of 100V, RDS(on) = 1.5mΩ(MAX) @VGS = 10 V, RDS(on) =1.3mΩ(TYP) @VGS = 10 V, and a maximum gate-source voltage of @VGS = ±20 V.

FHL385N1F1A is an N-channel enhancement-mode field-effect transistor. The FHL series adopts the TOLL-8L package form, and the packaged products have features such as low internal resistance, low parasitic inductance, small size, and low thermal resistance.

This product also has the following specific parameter values: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 385A; BVdss(V): 100V.

Maximum pulse drain current (IDM): 1540(A), static on-resistance (typ): 1.3mΩ, reverse transfer capacitance: 940pF.

In PD power supplies, MOSFETs mainly play the role of switches and current regulation. Therefore, when choosing a replacement for the IPT015N10N5 MOSFET, it is essential to select high-quality domestic MOSFETs.

In the process of replacing domestic MOSFETs, the Feihong domestic model FHL385N1F1A is used to replace the IPT015N10N5 model. Its industrial-grade product characteristics make it more widely applicable in high-power density applications such as PD power supplies, battery management systems (BMS), synchronous rectification, motor control of 72V lead-acid batteries for electric motorcycles, four-wheel electric sightseeing vehicles, lithium battery protection, communication power supplies, etc.; MOSFET brand alternative model: IPT015N10N5.

The replacement of a 100V, 385A MOSFET is very important to choose the right model parameters. Feihong has obtained 15 utility patents and inventions and cooperates with Sun Yat-sen University and the Chinese Academy of Sciences to develop GaN devices. Feihong products have been widely applied in PD power supplies, DC/DC converters, BLDC motor drives, helping partners solve domestically excellent products that meet national conditions and international quality standards. In addition to providing free samples, we can also customize MOSFET products according to customer needs. You can find us by searching "Feihong Semiconductor" on Baidu, and our free sample hotline is 400-831-6077.