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LED Driver Selection Substitute Daquan recommend
When replacing the IPP041N04NG model MOSFET, BMS electronic designers need to focus on several key details. First is the performance parameters of the MOSFET, such as whether the current can reach 200A and the voltage can reach 40V. The listed parameters determine the efficiency of the device.
Global BMS manufacturers have widely selected FHS200N4F3A as an effective replacement for IPP041N04NG and have been widely adopted. I am very willing to recommend its detailed technical parameters to everyone:
1. Fast switching speed
2. Threshold voltage: 2.0-4.0V
3. Reverse transfer capacitance: 133pF
4. Static on-resistance: 2.4mΩ (Typ), 3.1mΩ (Max)
5. Vgs: ±20V
6. N-channel enhancement-mode field-effect transistor
Gusheng's decision to choose Feihong Semiconductor was based on the fact that the FHS200N4F3A model is specifically designed for BMS.
To optimize the power switch performance of the BMS circuit, Feihong Semiconductor highly recommends selecting the FHS200N4F3A model MOSFET. This MOSFET with a rated current of 200A and a rated voltage of 40V can effectively address difficulties such as product brand reputation decline, electromagnetic noise, and heat dissipation issues.
The BMS circuit can use the domestic FHS200N4F3A model MOSFET. Feihong Semiconductor MOSFET manufacturers strive to provide the most reliable component supply assurance for electronic manufacturers such as BMS, inverters, and online UPS. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!









