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The potential of the pure domestic ultra-low RDS(on) MOSFET, FHA250N1F2A, in DC/DC module circuits

Article Category:MOS transistor information Release time:2024-12-15 Number of page views:349 Share:
The rapid development of technology has led to an increasing demand for high-power switch devices in various service industries. It is worth noting that in fields such as DC/DC modules and AC adapters, the need for ultra-low on-resistance MOSFETs capable of precise current control and regulation is becoming increasingly urgent. In the design of DC/DC module circuits, it is crucial to select a perfect purely domestic ultra-low on-resistance MOSFET device to replace the Infineon IPP030N10N3G model. The ultra-low on-resistance MOSFET market currently faces significant challenges, with unreliable common practices leading to inefficiency and poor safety benefits, which not only severely affect the normal operation of DC/DC modules but also increase maintenance costs. Under these circumstances, selecting the best parameters for a domestically produced alternative to ultra-low on-resistance MOSFETs is critical. When replacing the Infineon IPP030N10N3G model with an ultra-low on-resistance MOSFET, DC/DC module electronic engineers must focus on several key points. The first is the performance parameters of the ultra-low on-resistance MOSFET, such as whether the current can reach 250A and whether the voltage can reach 100V, as these parameters determine the efficiency of the device. For electronic engineers pursuing high-efficiency DC/DC modules, the FHA250N1F2A ultra-low on-resistance MOSFET product is a wise choice. Its technical specifications are precisely compatible with the Infineon IPP030N10N3G, with detailed parameters as follows: 1. RDS(ON): 2.5mΩ (Typ), 3.0mΩ (Max) 2. Current: 250A, Voltage: 100V 3. Vgs: ±20V 4. 100% DVDS thermal resistance test 5. N-channel enhancement-mode field-effect transistor 6. VGS(th): 2.0-4.0V 7. Avalanche current: 32A If you're looking for the FHA250N1F2A ultra-low on-resistance MOSFET in Jincheng City to enhance the performance of DC/DC modules, Ge, the leader of DC/DC module manufacturers in Jincheng City, chose Hong Semiconductor due to its excellent service. Hong Semiconductor's FHA250N1F2A ultra-low on-resistance MOSFET, with its combination of 250A and 100V, enhances the control capability of the DC/DC module circuit and resolves issues of low efficiency and poor safety benefits. DC/DC module manufacturers choosing Hong Semiconductor's ultra-low on-resistance MOSFET supplier aim to provide the most reliable component supply assurance for electronic manufacturers such as lithium battery protection and AC-DC converters. For more details, you can search "Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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