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The whole bridge topology is made of domestic MOS tubes, replacing IRFB7545PbF model parameters to improve conversion efficiency!

Article Category:Featured Articles Release time:2024-12-15 Number of page views:447 Share:

Compared with half-bridge or push-pull topology, full-bridge topology has higher power handling capability, symmetric voltage conversion characteristics and better efficiency, often applicable to high-power and high-efficiency scenarios. For example: uninterruptible power supply (UPS), power converters, audio amplifiers, etc.


This article focuses on the MOSFET that is being verified for use in the full-bridge topology circuit of a UPS paired with a 12V/24V battery. Such UPSs are commonly used in SOHO small office and home office equipment. It is a pure domestic MOSFET that can replace the IRFB7545PbF field-effect transistor model.


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It is the FHP1906V MOSFET model developed and produced by Feihong Semiconductor, which can replace domestic MOSFET models such as IRFB7545PbF, HY1906, FHP1906A, etc., for application in full-bridge topology!


As an N-channel enhancement mode field-effect transistor, with its current and voltage characteristics of 120A and 60V, electronic engineers can not only apply it to full-bridge topology but also use it in DC-DC converters, inverters, motor control and drive applications.


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The specific parameters of this FHP1906V field-effect transistor product are: Vgs(±V): 30; VTH(V): 3; ID(A): 120; BVdss(V): 60. RDS(on) = 5.0mΩ(typ)@VGS=10V, RDS(on) = 6.0mΩ(max)@VGS=10V.


The above parameters are what allow FHP1906V to replace IRFB7545PbF for use in full-bridge topology to address issues related to efficiency, power density, thermal management, and overall reliability in full-bridge circuits.


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In addition, the main package form of FHP1906V is TO-220 package, complying with JEDEC standards, and environmentally friendly, meeting RoHS and REACH standards, and free of halogens.


Advanced trench technology has been adopted to reduce conduction losses, improve switching performance, and increase avalanche energy. This transistor can be used in various power switch circuits to achieve system miniaturization and high efficiency.

If you want to introduce a 120A current and 60V voltage MOSFET, it is highly recommended to prioritize the pure domestic FHP1906V model to replace IRFB7545PbF for use in full-bridge topology.


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For the replacement of 120A, 60V MOSFETs, selecting the right model for full-bridge topology is crucial. Feihong Semiconductor's MOSFETs are not only widely used in full-bridge topology but can also be applied in frequency converters, photovoltaic inverters, welding machines, industrial sewing machines, and other end-use applications.


They provide quality products and supporting services to domestic electronics manufacturers. In addition to providing free samples, they can also customize MOSFET products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us, and the free sample hotline is 400-831-6077.


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