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Replace the IRFB7545PbF model parameters of the domestic MOS tube, so that the car high-frequency inverter efficient conversion of energy!

Article Category:Featured Articles Release time:2024-11-22 Number of page views:404 Share:

In the vehicle-borne high-frequency inverter with 12V battery input, the boost circuit utilizing the DC/DC push-pull topology mainly relies on the MOSFET to achieve efficient energy conversion. Therefore, it can be known that how to select good MOSFETs for the vehicle-borne high-frequency inverter in circuit design will directly affect its energy conversion.


Today, we are sharing this 120A, 60V low-current, high-reliability N-channel enhancement-mode field-effect transistor, which is precisely characterized by high reliability and can replace models like IRFB7545PbF and be applied to the circuit of the vehicle-borne high-frequency inverter.


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Why? Let's take a look at the detailed parameters of this FHP1906V model MOSFET:


The main packaging form of FHP1906V is TO-220 packaging, which complies with the JEDEC standard. It is environmentally friendly, meeting the RoHS and REACH standards, and is halogen-free.


The specific parameters of this FHP1906V field-effect transistor product are as follows: Vgs (±V): 30; VTH (V): 3; ID (A): 120; BVdss (V): 60. RDS (on) = 5.0mΩ (typ) @ VGS =10V, RDS (on) = 6.0mΩ (max) @ VGS =10V.


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Moreover, FHP1906V adopts advanced trench technology, reducing conduction loss, improving switching performance, and enhancing avalanche energy. This transistor can be used in various power switch circuits to achieve system miniaturization and high efficiency.


With characteristics such as 120A and 60V, electronic engineers generally use it in DC-DC converters, inverters, motor control, and drivers. Of course, such a field-effect transistor can be applied in many scenarios, depending specifically on the parameter requirements of the engineer for the product.


Currently, this 120A, 60V MOSFET can match the vehicle-borne high-frequency inverter to replace the IRFB7545PbF model. Generally speaking, the push-pull boost circuit usually requires two FHP1906V model MOSFETs (such as M1 and M2) combined with magnets (transformers) and other passive components (capacitors, inductors, etc.).


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Besides the suitable parameters, Feihong's engineers also provide high-quality product testing services. Feihong is dedicated to the research, development, production, and sales of semiconductor devices, integrated circuits, and power semiconductors, providing sustainable stable supply to manufacturers. With 35 years of experience in the semiconductor industry and 20 years of research and manufacturing experience, we can not only provide free samples but also customize MOSFET products according to customer needs.


You can find us by entering "Feihong Semiconductor" directly into Baidu, and our free sample hotline is 400-831-6077.


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