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Server synchronous rectifier MOSFET model selection, recommend FHL300N1F2A FET replacement IPT020N10N5!

Article Category:Featured Articles Release time:2024-07-19 Number of page views:747 Share:

In the continuous development of AI computing power, how should the core application product, the server, improve its quality? The synchronous rectification product is one of the key points. After all, synchronous rectification technology plays multiple roles in improving efficiency, reducing heat, and enhancing reliability in server power supplies. Therefore, it has become a crucial component in modern server power supply designs.


Since MOSFETs can improve efficiency and reduce product heat more effectively than traditional diodes, choosing an excellent domestic MOSFET that can replace the IPT020N10N5 model parameters is very important.


In fact, in today's market, besides the IPT020N10N5 parameter model, we can also choose the FHL300N1F2A field-effect transistor from Feihong Semiconductor.


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Why is the FHL300N1F2A field-effect transistor model considered capable of replacing the IPT020N10N5 model to achieve efficiency improvement and heat reduction? The key lies in its following characteristics:


1. Industrial-grade reliability performance: Small package inductance, resulting in excellent EMI characteristics and reliability.

2. Low on-resistance: Supports smaller impedance and larger peak current.

3. 100% EAS test

4. 100% Rg test

5. 100% DVDS thermal resistance test (lower thermal resistance, resulting in excellent temperature rise performance)


From the above description, it is known that this industrial-grade FHL300N1F2A field-effect transistor model with 300A current and 100V voltage is very suitable for use in synchronous rectifier circuits.


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In practical applications, our server research and development engineers must understand the detailed parameters of this high-quality FHL300N1F2A domestic field-effect transistor: it has a current and voltage of 300A and 100V respectively, RDS(on) = 2.0mΩ(MAX) @VGS = 10V, RDS(on) = 1.6mΩ(TYP) @VGS = 10V, and the maximum gate-source voltage @VGS = ±20V.


The FHL300N1F2A is an N-channel enhancement-mode field-effect transistor. The FHL series adopts the TOLL-8L package form, with its packaged products featuring small size, low thermal resistance, low package internal resistance, and low parasitic inductance characteristics.


The specific parameter values of the FHL300N1F2A are: Vgs(±V): 20; VGS(th): 2.0-4.0V; ID(A): 300A; BVdss(V): 100V.


Maximum pulse drain current (IDM): 1200A, static on-resistance (typ): 1.6mΩ, reverse transfer capacitance: 328pF.


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When considering efficiency improvement and heat reduction in servers, it is essential to start from the synchronous rectifier circuit. For domestication, it is recommended to prioritize selecting the high-quality FHL300N1F2A field-effect transistor to replace the IPT020N10N5 parameter model for use in synchronous rectifier circuits.


The replacement of 100V, 300A MOSFETs is critical to choose the right model. Feihong Semiconductor's MOSFETs are not only widely used in the synchronous rectifier circuits of servers but are also applied in new energy electric vehicles, audio amplifiers, UPS, and other terminal application scenarios. They provide high-quality products and supporting services for domestic electronic product manufacturers. In addition to providing free samples, they can also customize MOSFET products according to customer needs. You can find us by searching "Feihong Semiconductor" on Baidu, and the free sample hotline is 400-831-6077.


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