The momentum of light storage is still growing rapidly. In the morning of June 25, 2024, the grand opening ceremony of the G60 Sci-Tech Innovation Corridor of the Yangtze River Delta · Zheneng Power Photovoltaic Energy Storage Intelligent Manufacturing Base Project in Songjiang District was held with great pomp and circumstance.

This means that another major project in this industrial chain has been advanced, with energy storage inverters being an important component. In the market, what kind of IGBT single modules can be used to replace the international model 75N65 in terms of parameters?

Under the support of national policies, the development of domestic IGBT single modules has entered a fast track. China's IGBT technology continues to update and iterate. Currently, there is the domestically produced FHA75T65A IGBT single module which can directly replace the 75N65 model parameters for use in energy storage inverters.

Why is it FHA75T65A IGBT single module? This is because it has high reliability as well as fast recovery diode characteristics in reverse parallel, Trench Field Stop technology (low turn-off loss, very short tail current, excellent Vcesat saturation voltage drop), and possesses positive temperature coefficient.

In combination with the features of IGBT single modules, it is known that the parameters of this 75A, 650V current, voltage FHA75T65A model IGBT single module are very suitable for use in the inverter circuit of energy storage inverters.

In application, energy storage inverter R&D engineers should pay attention to the detailed parameters of this high-quality FHA75T65A domestic IGBT single module: it has 75A, 650V, typical VCEsat value: 1.75V-typ, <2.0V; ID (Tc=100℃): 75A; BVdss: 650V; IF(A)(Tc=25℃): 150A; IF(A)(Tc=100℃): 75A.

FHA75T65A is an N-channel trench gate IGBT with optimized process and using Trench Field stop Ⅱ technology, thereby obtaining extremely low VCEsat saturation voltage drop and making good trade-offs between conduction loss and off-state loss (Eoff).

FHA75T65A's excellent on-state voltage drop and extremely short tail current provide strong assistance to customers in optimizing system efficiency.

Currently, the FHA75T65A IGBT single module has been widely applied in energy storage inverters, outdoor energy storage power supplies, UPS, photovoltaic inverters, welding machines, and various soft and hard switching and PFC circuits, applicable for switching frequencies ranging from 1 to 60KHz.

The TO-247 package form further verifies its suitability for replacing the 75N65 IGBT single module. Under the improvement of domestic technology and cost-effectiveness, choosing the FHA75T65A IGBT single module is a direct replacement for the 75N65 parameter model, helping to improve product stability and reliability.

For the replacement of 650V, 75A IGBTs, selecting the right model for energy storage inverters is crucial. Feihong Semiconductor's IGBTs are not only widely used in energy storage inverters but also in outdoor energy storage power supplies, frequency converters, photovoltaic inverters, welding machines, and industrial sewing machines, among other terminal applications. They provide quality products and supporting services to domestic electronics manufacturers. In addition to offering free samples, they can also customize IGBT products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us, and our free sample hotline is 400-831-6077.