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Photovoltaic inverter how to choose 75N65 replacement IGBT? Available FHA75T65A models single tube!

Article Category:Featured Articles Release time:2024-06-28 Number of page views:1123 Share:

From June 13 to 15, the 17th (2024) International Photovoltaic Power Generation and Smart Energy Conference and Exhibition (referred to as "2024 Shanghai PV Exhibition") is currently taking place in Shanghai. This year's conference sees companies not only showcasing their top products but also focusing on innovation and cost-effectiveness to continuously explore new possibilities.


Today, Feihong Semiconductor will analyze with everyone how photovoltaic inverters can choose the 75N65 IGBT single tube for replacement, thus achieving product innovation and cost-effectiveness.


Currently, by choosing an excellent domestic IGBT single tube, the circuit efficiency of photovoltaic inverters can be improved, the output waveform optimized, and the circuit's anti-interference capability enhanced. Feihong recommends using the FHA75T65A IGBT single tube to replace the 75N65 model.


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Why does the domestic IGBT single tube FHA75T65A suit photovoltaic inverters?


Because the IGBT single tube FHA75T65A has high reliability and fast recovery diode characteristics in reverse parallel, Trench Field Stop technology (very short tail current, low off loss, excellent Vcesat saturation voltage), and possesses a positive temperature coefficient.


From the above features, it is known that this 75A, 650V current and voltage FHA75T65A model IGBT single tube parameters are very suitable for use in photovoltaic inverter circuits.


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In application, photovoltaic R&D engineers should pay attention to the detailed parameters of this excellent FHA75T65A domestic IGBT single tube: it has 75A, 650V, VCEsat typical value: 1.75V-typ, <2.0V; ID (Tc=100℃): 75A; BVdss: 650V; IF(A)(Tc=25℃): 150A; IF(A)(Tc=100℃): 75A.


FHA75T65A is an N-channel trench gate IGBT, using Trench Field Stop II technology and optimized processes to achieve extremely low VCEsat saturation voltage, and making a good trade-off between conduction loss and turn-off loss (Eoff).


The excellent conduction voltage drop and extremely short tail current of FHA75T65A provide strong assistance to customers in optimizing system efficiency.


Currently, the FHA75T65A model IGBT single tube is widely applicable to photovoltaic inverters, high-frequency car sine wave AC220V inverters, outdoor energy storage power supplies, welding machines, and various soft and hard switching and PFC circuits. It can replace other brand models: 75N65.


The packaging form of FHA75T65A is TO-247. The product parameters are: Vcesat-typ (@Ic=75A): 1.75V; IC(A): 75A; Bvces(V): 650V; Vge(±V): 30.


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In terms of product application, it is recommended to use 4 pieces in the DC-AC inverter circuit of photovoltaic inverters and 2 pieces in the PFC circuit.


Industry chain collaboration can continuously optimize corporate product capabilities and efficiency. Feihong's continuous product development also contributes its strength to all manufacturers at the 2024 Shanghai PV Exhibition.


In addition to the suitable parameters, Feihong's engineers also provide high-quality product testing services. Feihong is dedicated to the research, production, and sales of semiconductor devices, integrated circuits, and power semiconductors, providing sustainable stable supply to manufacturers. With 35 years of experience in the semiconductor industry and 20 years of R&D and manufacturing experience, free samples can be provided, and IGBT products can be customized according to customer needs.


You can find us by directly entering "Feihong Semiconductor Manufacturer" in Baidu. Free sample hotline: 400-831-6077.


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