The use of IGBT single transistors needs to be combined with different scenarios, and not all products need to use IGBT single transistors. Some low-power and low-voltage products can use field-effect transistors. Generally, the inverter circuit in solar energy storage power supplies can improve product performance by using IGBT single transistors.

In particular, solar energy storage power supplies involving several kilowatts usually use the 75N65 model IGBT single transistor, but due to design requirements and requirements for localization, they are now gradually replacing 75N65 with the FHA75T65A model.

Why? This is because the FHA75T65A IGBT single transistor has high reliability and fast recovery diode characteristics in reverse parallel, Trench Field Stop technology (very short tail current, low turn-off loss, excellent Vcesat saturation voltage drop), and has a positive temperature coefficient.

From the above characteristics, it can be known that the parameters of this 75A, 650V current, voltage FHA75T65A model IGBT single transistor are very suitable for use in the inverter circuit of a solar energy storage power supply.

Of course, in application, our solar energy storage power supply R&D engineers must understand the detailed parameters of this high-quality domestic FHA75T65A IGBT single transistor: It has a current of 75A, a voltage of 650V, a typical VCEsat value: 1.75V-typ, <2.0V; ID (Tc=100℃): 75A; BVdss: 650V; IF(A)(Tc=25℃): 150A; IF(A)(Tc=100℃): 75A.

FHA75T65A is an N-channel trench gate IGBT, using Trench Field Stop II technology and optimized processes to achieve extremely low VCEsat saturation voltage drop, and can make a good trade-off between conduction loss and turn-off loss (Eoff).

FHA75T65A's excellent on-state voltage drop and extremely short tail current provide strong assistance to customers in optimizing system efficiency.

Currently, the FHA75T65A model IGBT single transistor has been widely applied to various soft and hard switch circuits and PFC circuits such as solar energy storage power supplies, photovoltaic inverters, outdoor energy storage power supplies, UPS, welding machines, etc., and can be used for switching frequencies from 1 to 60 kHz.

The TO-247 package form further verifies its suitability for replacing the 75N65 model IGBT single transistor.

The inverter is a key part of the solar energy storage system, responsible for converting DC power into AC power. Therefore, choosing high-quality IGBTs is very important in such high-power applications. In the market, the FHA75T65A IGBT single transistor is a high-quality replacement for the 75N65 parameter model, helping to enhance product stability and reliability.

For the replacement of 650V, 75A IGBTs in solar energy storage power supplies, selecting the right model is crucial. Feihong Semiconductor's IGBTs are not only widely used in solar energy storage power supplies but also applicable to photovoltaic inverters, outdoor energy storage power supplies, frequency converters, welding machines, industrial sewing machines, and other terminal application scenarios. They provide high-quality products and services to domestic electronic product manufacturers. In addition to offering free samples, we can also customize IGBT products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us. Free sample hotline: 400-831-6077.