According to the latest data from the General Administration of Customs in 2023: the export values of single-phase watt-hour meters, three-phase watt-hour meters, high-voltage switches, transformers and other related products are $7.7 billion / $5.8 billion / $33.08 billion / $52.94 billion respectively, with year-on-year growth rates of 15.72% / 22.97% / 27.30% / 19.90%, indicating an increase in the prosperity of China's power equipment exports.

It is expected that by 2028, the Asia-Pacific and Latin American regions will increase by approximately 60.93 million smart electricity meters compared to around 2021-2022. Faced with such a growing market, smart electricity meter manufacturers need to improve their products, among which the auxiliary batteries for smart electricity meters require careful selection of high-quality MOSFETs to replace the 3N150 model parameters.

Currently, domestically, the FHA3N150A can be used to replace models like the 3N150 with field-effect transistors having similar parameters for application in the auxiliary battery circuits of smart electricity meters.

Why is the FHA3N150A chosen to replace the 3N150 and other field-effect transistors? This is because this MOSFET with a TO-247 package form can be widely used in the auxiliary battery circuits of smart electricity meters.

Its product parameters can be used in smart electricity meter circuits, and we can understand the parameters in detail:

With a current of 3A and voltage of 1500V, RDS(on): 6.5Ω (Max) (test conditions: VGS=10V, ID=1.5A), RDS(ON): 5Ω (Typ), maximum gate-source voltage @ VGS=±30V.

The FHA3N150A is an N-channel enhancement-mode field-effect transistor, with a TO-247 package size suitable for circuit applications.

This product has specific parameter values: VGS(th): 2.0-4.0V; Vgs(±V): 30; ID(A): 3A; BVdss(V): 1500V.

Maximum pulse drain current (IDM): 12(A), reverse transfer capacitance: 32pF.

In the face of market growth, the key to抓住 opportunities in the auxiliary battery circuits of smart electricity meters is how to select a replacement for the 3N150 model parameters. It is recommended to understand the domestic model from Feihong: the FHA3N150A field-effect transistor model.

Replacing the 3A, 1500V MOSFET, choosing the right model parameters allows enterprises to enhance their product capabilities. Feihong has obtained 15 utility patents and inventions, and collaborates with Sun Yat-sen University and the Chinese Academy of Sciences to develop GaN devices. Feihong products have been widely applied in smart electricity meter circuits, various DC/DC power supplies, energy storage power supplies, DC-AC inverters, AC-DC switch power supplies, garden tools, and BLDC motor drivers, helping partners solve domestic quality products that meet national conditions and international standards. In addition to providing free samples, Feihong can also customize MOSFET products according to customer needs. Simply search for "Feihong Semiconductor" on Baidu to find us, and the free sample hotline is 400-831-6077.