The Pearl River Delta region represented by Shenzhen, Dongguan, Guangzhou, Zhuhai, and Foshan, the Yangtze River Delta region represented by Shanghai and Hangzhou, as well as the area formed by Beijing, Tianjin, Hebei, and other regions have become switch power supply distribution centers. It is estimated that the total output value of these areas in 2024 will break through the 200 billion yuan mark nationwide.

Among them, the growth rate of the细分high-frequency switch power supply field is expected to be higher than the entire industry. Facing such a growing market, maintaining market share is the core for enterprises. And improving product quality requires good MOS tube products.

Currently, domestically, the FHA24N90A can be used to replace models like IXFH24N90P and other parameter field effect transistors for application in high-frequency switch power supply circuits.

Why is FHA24N90A chosen to replace IXFH24N90P and other field effect transistors? This is because this MOS tube with TO-247 packaging form can be widely used in high-frequency switch power supply circuits.

Its product parameters can be used in high-frequency switch power supply circuits, and we can understand the parameters in detail:

With a current of 24A and voltage of 900V, RDS(ON): 350mΩ (Max) (test conditions: VGS =10V, ID=12A), RDS(ON): 290mΩ (Typ), maximum gate-source voltage @ VGS =±30V.

FHA24N90A is an N-channel enhancement-mode field-effect transistor, with a suitable size for circuit applications in TO-247 packaging.

This product has specific parameter values: VGS(th): 2.0-4.0V; Vgs(±V): 30; ID(A): 24A; BVdss(V): 900V.

Maximum pulse drain current (IDM): 96 (A), reverse transfer capacitance: 51pF.

It is precisely due to the above parameters of this MOS tube that it plays a core control role in high-frequency switch power supply circuits.

Therefore, if you are considering how to select a model parameter replacement for the IXFH24N90P type in high-frequency switch power supply circuits, it is recommended to understand the domestic model from Feihong: FHA24N90A field effect transistor.

Using a 24A, 900V MOS tube as a replacement, selecting the right model parameters allows companies to enhance their product strength. Feihong has obtained 15 utility patents and inventions and has collaborated with Sun Yat-sen University and the Chinese Academy of Sciences to develop GaN devices. Feihong's products have been widely applied in high-frequency switch power supply circuits, various DC/DC power supplies, energy storage power supplies, DC-AC inverters, AC-DC switch power supplies, garden tools, and BLDC motor drives, helping partners solve domestic high-quality products that meet national conditions and international quality standards. In addition to providing free samples, we can also customize MOS tube products according to customer needs. Simply enter "Feihong Semiconductor" in Baidu to find us. Free sample hotline: 400-831-6077.