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170N1F4A replacement STP150N10F7 for solar controller drive circuit, control more simple!

Article Category:Featured Articles Release time:2024-03-22 Number of page views:878 Share:

In the era of intelligence, MPPT solar charge controllers are constantly upgrading. Nowadays, more and more manufacturers are using high-speed computing technology and efficient chips to improve the conversion rate of their own products. It is said that DEMUDA's developed product can increase the conversion rate to over 98% and has a peak tracking efficiency of over 99%.


Today, the engineers from Fehong Semiconductor would like to remind you that besides the constant improvement in intelligence, don't forget to enhance product quality by improving the MOSFETs at the most fundamental level of the circuit. After all, the MOSFET is also the central electronic component of an MPPT solar charge controller.



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In the era of supporting domestication, it is a popular topic among engineers to find MOSFETs that can replace models such as STP150N10F7, MDP1991, HYG045N10NS1P, HYG042N10NS1P, IPP045N10N3G, and SVG104R0NT for use in the development of MPPT solar charge controller circuits.


It is recommended to consider the 170N1F4A MOSFET model, which is a pure domestic MOS semiconductor component capable of replacing the aforementioned models in driving circuits.


Currently, in the domestic market, the 170N1F4A MOSFET model can be perfectly used in MPPT solar charge controllers, which has been recognized by many motor manufacturers. In addition to the basic parameters of 172A and 100V, it also features excellent product characteristics:


1. RoHS compliant product

2. SGT process

3. 100% DVDS tested

4. Low gate charge

5. Low Crss (typical value 33 pF)

6. Fast switching speed

7. 100% tested with Rg

8. 100% avalanche tested

9. 100% thermal resistance tested

10. Extremely low FOM (RDSON*Qg)


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Of course, in addition to its excellent features, the 170N1F4A can replace the low-voltage MOSFET models such as STP150N10F7, MDP1991, HYG045N10NS1P, HYG042N10NS1P, IPP045N10N3G, and SVG104R0NT due to its superior parameters:


1. Maximum pulse drain current (IDM): 480A

2. N-channel enhancement mode field-effect transistor

3. Vgs(±V): 20; VGS(th): 2.0-4.0V;

4. ID(A): 172A; BVdss(V): 100V

5. TO-220 packaged products can be used in controller circuits

6. Reverse transfer capacitance: 33pF

7. Static on-resistance RDS(on) = 4.4mΩ(MAX) @VGS = 10 V, RDS(on) =3.6mΩ(TYP) @VGS = 10 V


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For circuit upgrades in MMPT solar charge controllers, it is recommended to choose the 170N1F4A MOSFET model.


Fehong Semiconductor provides professional products and one-stop service for power devices to electronic manufacturers, always starting from user needs.

Its excellent manufacturing process and parameter performance provide better compatibility for solar charge controllers, ensuring product reliability.


The rapid iteration of the domestic market emphasizes the importance of selecting the right model for improving product quality. Fehong Semiconductor's MOSFETs have been widely applied in power circuits, smart home appliances, new energy electronics sectors: such as smart speakers, household appliances, LED lighting, automotive electronics, electric vehicles, chargers, computer power supplies, and other industries, providing high-quality products and services to domestic electronic manufacturers. In addition to free trials, they can also customize MOSFET products according to customer needs. Simply search "Fehong Semiconductor" on Baidu to find us, and our free trial hotline is 400-831-6077.


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