According to data analysis by research institutions: the global market size of 5G base station power supplies was about $1.3 billion in 2019, and it is expected to reach $4 billion by 2025, with an annual compound growth rate of approximately 20%. In China, as of May 2023, the total number of 5G base stations has reached 2.844 million.

These data indicate that 5G base station power supply manufacturers need to increase their R&D investment to improve their own products in order to enhance their market share. As an important component of 5G base station power supplies, MOSFETs require high-quality product recommendations.

Currently, there are multiple domestic and international products such as SVG104R0NT, MDP1991, HYG045N10NS1P, HYG042N10NS1P, IPP045N10N3G, and STP150N10F7 that can be applied in the circuits of 5G base station power supplies. Today, we will share how electronic engineers can select high-quality domestic MOSFETs.

In the era of comprehensive localization, how to choose field effect transistors that can replace models such as SVG104R0NT, MDP1991, HYG045N10NS1P, HYG042N10NS1P, IPP045N10N3G, and STP150N10F7 for circuit development has become a hot topic among engineers. Today, let us understand a 170N1F4A model field effect transistor, which is a pure domestic MOSFET semiconductor component that can replace the above models in 5G base station power supplies.

Currently, in the domestic market, the 170N1F4A model field effect transistor is effectively used in 5G base station power supplies, which has been recognized by many power supply manufacturers. Besides the basic parameters of 172A and 100V, it also has excellent product features:

1. Low gate charge

2. Low Crss (typical value 33 pF)

3. Fast switching speed

4. 100% tested with Rg

5. 100% tested with avalanche test

6. 100% tested with thermal resistance test

7. RoHS compliant product

8. SGT process

Of course, apart from these excellent features, the 170N1F4A can replace models like SVG104R0NT, MDP1991, HYG045N10NS1P, HYG042N10NS1P, IPP045N10N3G, and STP150N10F7 due to its superior parameters:

1. Vgs(±V): 20; VGS(th): 2.0-4.0V;

2. ID(A): 172A; BVdss(V): 100V

3. Maximum pulse drain current (IDM): 480A

4. N-channel enhancement mode field-effect transistor

5. TO-220 packaged products can be used in 5G base station power supplies

6. Reverse transfer capacitance: 33pF

7. Static on-resistance RDS(on) = 4.4mΩ(MAX) @VGS = 10 V, RDS(on) = 3.6mΩ(TYP) @VGS = 10 V

For manufacturers who want to upgrade the quality of 5G base station power supplies, it is recommended to use the 170N1F4A model field effect transistor.

Feihong Semiconductor provides professional products and one-stop service for power devices to electronic manufacturers, always starting from user needs.

Its excellent manufacturing process and parameter performance provide better compatibility for 5G base station power supplies, ensuring product reliability.

The rapid iteration of the domestic market emphasizes the importance of selecting the right model for improving product quality. Feihong Semiconductor's MOSFETs have been widely applied in power circuits, smart home appliances, new energy electronics fields: such as automotive electronics, electric vehicles, smart speakers, household appliances, LED lighting, chargers, computer power supplies, and other industries, providing high-quality products and supporting services to domestic electronic product manufacturers. In addition to free samples, they can also customize MOSFET products according to customer needs. Simply search "Feihong Semiconductor" on Baidu to find us, and the free sample hotline is 400-831-6077.