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Pure domestic premium product, FHP170N1F4A high power SGTMOSFET媲美 international model IPP045N10N3G in excellent performance.

Article Category:MOS transistor information Release time:2024-09-23 Number of page views:548 Share:
As technology accelerates its improvement, the requirements for power electronic conversion devices in various trades are constantly expanding. It is worth noting that in industries such as inverters, TVs, and audio systems, the demand for current control and regulation devices — high-power SGTMOSFETs — is urgent. Choosing a pure domestically produced alternative, IPP045N10N3G model, for use in inverter circuits has become extremely crucial. The current quality issues with high-power SGTMOSFETs — electromagnetic noise, heat dissipation problems, low reliability, etc. — pose threats to the normal operation of inverter equipment. From this perspective, seeking an excellent quality domestic alternative model for high-power SGTMOSFETs has become extremely important. In inverter electronics engineering, when selecting the IPP045N10N3G model high-power SGTMOSFET, designers need to focus on its performance indicators, such as whether the current can meet 172A, whether the voltage can reach 100V, etc. These indicators have a decisive impact on the efficiency of the inverter circuit. Aside from what was mentioned above, the breakdown voltage (BVCES) and turn-off loss of the device are also key points of attention. Comprehensive breakdown voltage (BVCES) performance helps improve the quality of the inverter. In practical cases, FHP170N1F4A has successfully achieved domestic substitution for IPP045N10N3G in most domestic inverter manufacturers and can be widely used. We highly recommend every designer familiarize themselves with its detailed parameters: 1. Forward maximum pulse current: 480A 2. Maximum gate-source voltage Vgs: ±20V 3. N-channel enhancement type 4. High avalanche tolerance 5. Current capability of 172A, voltage capability of 100V 6. Threshold voltage VGS(th): 2.0-4.0V Feihong Semiconductor strongly recommends using the FHP170N1F4A model high-power SGTMOSFET to enhance the power switching capability of the inverter circuit. This high-power SGTMOSFET with rated parameters of 172A and 100V can effectively overcome unknown issues such as electromagnetic noise, heat dissipation problems, and low reliability. Inverter manufacturers choosing Feihong Semiconductor as a distributor of high-power SGTMOSFETs can provide comfortable component supply guarantees for LED lighting, UPS backup systems, and other electronic manufacturers. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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