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Low-voltage SGTMOSFET circuit performance upgrade - FHP60N1F10A and IPP126N10N3G performance domestic replacement

Article Category:MOS transistor information Release time:2024-10-01 Number of page views:603 Share:
The continuous optimization of technology has promoted the widespread application of power electronic switch devices in various professional fields, especially in DC/DC power supplies and data center power supply areas. The demand for low-voltage SGTMOSFET devices that meet precise current control and regulation is becoming increasingly urgent. In DC/DC power circuits, selecting a unique pure domestic low-voltage SGTMOSFET device to replace the IPP126N10N3G model is particularly important. The quality issues of low-voltage SGTMOSFETs, such as reduced reliability, decreased efficiency, and poor heat dissipation effects, all affect the normal operation of DC/DC power supplies. Therefore, pursuing high-quality domestic replacement models of low-voltage SGTMOSFET products is very important. The use of the IPP126N10N3G low-voltage SGTMOSFET model in DC/DC power electronics engineering requires technicians to focus on its performance parameters, such as whether the current can reach 60A and whether the voltage can reach 100V. These listed parameters directly control the working efficiency of the DC/DC power circuit. In addition, the reverse parallel fast recovery and the voltage rise rate (dv/dt) are also key points of concern. FHP60N1F10A, a low-voltage SGTMOSFET product suitable for demanding DC/DC power engineers. It technically fits well with IPP126N10N3G, with detailed parameters as follows: 1. N-channel field-effect transistor 2. 60A current, 100V voltage 3. Fast switching capability 4. Threshold voltage VGS(th): 2.0-4.0V 5. RDS(ON): 10.2mΩ (Typ), 12mΩ (Max) 6. Maximum gate-source voltage: ±20V To enhance the conversion current performance of DC/DC power circuits, Feihong Semiconductor recommends choosing the FHP60N1F10A low-voltage SGTMOSFET model. This low-voltage SGTMOSFET with a rated current of 60A and a rated voltage of 100V solves practical problems such as reduced product reliability, decreased efficiency, and poor heat dissipation. Choosing the FHP60N1F10A low-voltage SGTMOSFET model from Feihong Semiconductor helps DC/DC power suppliers solve circuit development problems and ensures stable component supply. Consultation hotline: 400-831-6077, free samples waiting for you!

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