Introduction of new domestic MOSFET product: FHP230N06V model can be used in the circuit of high-frequency inverter, industrial frequency inverter, outdoor energy storage power supply, motor controller, UPS uninterruptible power supply, high-frequency switch power supply and other products.

The most core point is that FHP230N06V, as an N-channel enhancement mode field effect transistor, adopts advanced trench technology to reduce conduction loss, improve switching performance, and enhance avalanche energy.

This transistor can be used in various power switch circuits to achieve system miniaturization and high efficiency. The product shape is TO-220 package, which meets the JEDEC standard, and is environmentally friendly, complying with RoHS and REACH standards, and free of halogen.

The following will introduce FHP230N06V field effect tube in terms of product detailed application, product parameter characteristics, comparison with competitors' parameters, and some typical characteristic curves:

I. Product Detailed Application

(1) High-frequency inverter application: DC/DC push-pull topology boost circuit in the on-board high-frequency inverter with 12V battery input.

(2) Suitable for full-bridge topology industrial frequency inverter application.

(3) Suitable for outdoor energy storage power supply with 5-series lithium iron phosphate battery pack, using it in the DC-DC push-pull topology boost circuit in the inverter module.

(4) Suitable for 24-36V BLDC motor drive controller.

(5) Suitable for 24V battery-powered UPS uninterruptible power supply.

(6) Suitable for synchronous rectification in high-power high-frequency switch power supplies.

II. Product Parameter Characteristics

(1) 100% Rg test

(2) 100% EAS test

(3) 100% DVDS instantaneous thermal resistance test

(4) High avalanche tolerance, strong impact resistance

(5) Adopting refined Vth classification, further improving the high consistency of the product

(6) Possessing extremely low on-resistance RDS(on), excellent quality factor FOM(RDS(on)*Qg)

(7) By adopting unique trench process, combined with excellent encapsulation BOM materials, the product has high reliability and fast switching speed.

III. Competitor Parameters Comparison

(1) Compared with the parameters of HY3906P and CS160N06 models, it has a lower on-resistance, reduces conduction loss, improves the quality factor FOM(RDSON*Qg), and has better performance.

(2) Compared with IRFB7537PbF model parameters, it provides a cost-effective domestic field effect transistor replacement option.

IV. Some Typical Characteristic Curves

With the further blockade of American semiconductors, how to make the product competitive internationally in the future lies in choosing a reliable domestic MOSFET.

How to select a high-quality replacement model is a key topic. The release of the FHP230N06V new product provides electronic manufacturers with the choice of low on-resistance products and also offers cost-effective field effect transistors.

Hong Semiconductor focuses on the research, production, and sales of high-power discrete devices, integrated circuits, and power semiconductor devices, providing manufacturers with sustainable and stable supply. So far, it has 35 years of experience in the semiconductor industry and 20 years of R&D and manufacturing experience. In addition to providing free samples, it can also customize MOSFET products according to customer needs.

Just enter "Hong Semiconductor" directly into Baidu to find us, free sample hotline: 400-831-6077.