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As smooth as electric current: How to accurately select the MOSFET for electric vehicle controller 100N07B

Article Category:MOS transistor information Release time:2025-04-05 Number of page views:459 Share:
In the design of electric vehicle controllers, the selection of the field effect transistor (MOSFET) is crucial. It not only affects the efficiency of the circuit but also directly relates to the performance and reliability of the entire vehicle. Today, we will take the 100N07B from Fei Hong Semiconductor as an example, and teach you step by step how to accurately select a MOSFET for the electric vehicle controller, and delve into the advantages of the domestic alternative model HY1707. ### Step 1: Clarify Application Scenarios and Requirements Electric vehicle controllers need to handle large currents and high-frequency switching, so the requirements for MOSFETs are very strict. First, we need to focus on the following key parameters: 1. **Voltage and Current**: The maximum drain-to-source DC voltage (VDS) of the 100N07B is 68V, and the continuous drain current (ID) can reach up to 100A at 25°C, fully meeting the needs of electric vehicle controllers. 2. **Conduction Characteristics**: The static on-resistance (RDS(ON)) is as low as 5.9~7.2mΩ, which can effectively reduce power consumption and improve efficiency. 3. **Switching Speed**: The turn-on delay time (td(on)) is only 39ns, and the turn-off delay time (td(off)) is 95ns, ensuring stable operation under high-frequency switching. ### Step 2: Compare Domestic Alternative Models During the selection process, we also need to consider cost and supply stability. The 100N07B from Fei Hong Semiconductor can be used as a domestic alternative to the HY1707, with comparable performance but higher cost-effectiveness. Through 100% avalanche testing, thermal resistance testing, and Rg testing, the reliability of the 100N07B has been fully validated, completely meeting the stringent requirements of electric vehicle controllers. ### Step 3: Optimize Heat Dissipation Design High-power MOSFETs generate a lot of heat during operation, so heat dissipation design is critical. The junction-to-case thermal resistance (Rth(j-c)) of the 100N07B is only 0.7℃/W (TO-220 package), which can effectively reduce temperature rise and extend the life of the device. In practical applications, it is recommended to pair with suitable heat sinks and fans to ensure that the MOSFET operates within the optimal temperature range. ### Step 4: Verification and Debugging After completing the selection, it is necessary to verify the performance of the MOSFET through circuit simulation and actual testing. Fei Hong Semiconductor provides detailed data sheets and technical support to help you quickly complete the circuit design. In addition, the 100N07B complies with RoHS standards, is environmentally friendly, and suitable for long-term use. ### Advantages of Domestic Alternatives With the continuous advancement of domestic semiconductor technology, the 100N07B from Fei Hong Semiconductor has already demonstrated competitive strength in terms of performance, reliability, and cost control. Choosing the 100N07B not only reduces procurement costs but also shortens supply cycles, avoiding production stagnation caused by shortages. ### Conclusion In the design of electric vehicle controllers, the selection of field effect transistors is a complex but crucial process. The 100N07B from Fei Hong Semiconductor, with its excellent performance and reliability, is an ideal choice for domestic alternatives. If you are looking for a cost-effective MOSFET, give the 100N07B a try. Search "Fei Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077 to learn more about product information and apply for free samples!

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