In the design of energy storage power supplies, the selection of MOSFETs often troubles electronic engineers. Faced with complex parameters and diverse application scenarios, how to choose a MOSFET with excellent performance and high reliability has become the key. Today, we will recommend a domestic MOSFET from Feihong Semiconductor - the 170N1F4A. It not only perfectly replaces SVG104R0NT but also performs excellently in the design of energy storage power supplies. ### Challenges in MOSFET Selection for Energy Storage Power Supply Design As an important component in the field of new energy, the design of energy storage power supplies imposes extremely strict requirements on MOSFETs. Engineers need to focus on the following key points: 1. **High Current Carrying Capacity**: Energy storage power supplies often need to withstand large currents during operation. The continuous drain current (ID) and maximum pulse drain current (IDM) of the MOSFET must meet the design requirements. 2. **Low On-state Resistance (RDS(ON))**: Low on-state resistance can reduce power loss and improve overall efficiency. 3. **Fast Switching Characteristics**: Fast switching reduces switching losses and improves the response speed of the power supply. 4. **High Reliability**: Energy storage power supplies usually operate in harsh environments, so the MOSFET must have high reliability and long life. ### Feihong 170N1F4A: The Ideal Choice for Energy Storage Power Supply Design Feihong Semiconductor's 170N1F4A MOSFET, with its outstanding performance, has become the ideal choice for energy storage power supply design. Here are its main advantages: 1. **High Current Carrying Capacity**: The continuous drain current (ID) of the 170N1F4A at TC=25℃ can reach up to 172A, and the maximum pulse drain current (IDM) is as high as 480A, fully meeting the large current demands of energy storage power supplies. 2. **Low On-state Resistance**: Under conditions of VGS=10V and ID=50A, the static on-state resistance (RDS(ON)) of the 170N1F4A is only 3.6~4.4mΩ, effectively reducing power loss. 3. **Fast Switching Characteristics**: The turn-on delay time (td(on)) of the 170N1F4A is only 28ns, rise time (tr) is 32ns, turn-off delay time (td(off)) is 48ns, and fall time (tf) is 27ns, ensuring rapid response of the power supply. 4. **High Reliability**: The 170N1F4A has undergone 100% avalanche testing, 100% thermal resistance testing, and 100% Rg testing, featuring high reliability and long life, making it suitable for harsh working environments. ### Actual Application Case A well-known manufacturer of energy storage power supplies encountered a MOSFET selection problem during their design. The original SVG104R0NT showed unstable performance under high temperature conditions, leading to a decrease in power supply efficiency. After multiple comparisons, they chose to replace it with the Feihong Semiconductor 170N1F4A. In actual use, the 170N1F4A performed excellently, not only solving the performance issues under high-temperature conditions but also significantly improving the overall efficiency of the power supply. Customer feedback indicates that the stability and reliability of the 170N1F4A far exceeded expectations, becoming their preferred MOSFET for energy storage power supply design. ### Conclusion Feihong Semiconductor's 170N1F4A MOSFET, with its outstanding performance and high reliability, has become the ideal choice for energy storage power supply design. If you are struggling with MOSFET selection, give the Feihong 170N1F4A a try, and it will bring unexpected surprises to your design. Search for "Feihong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077, to learn more about the product information and apply for free samples.