In the design of inverter power supplies, selecting a high-performance and stable field-effect transistor (FET) is key to ensuring efficient system operation. However, many engineers and procurement personnel often face several pain points during the selection process: complex parameters that are difficult to weigh, risks of counterfeit products that are hard to avoid, and device failure caused by improper heat dissipation design. In response to these problems, finding a FET that can meet performance requirements while balancing cost control and supply stability has become an urgent issue. The 100N08B FET introduced by Fei Hong Semiconductor was specifically designed to address these pain points. As an N-channel trench MOSFET, the 100N08B not only perfectly matches STP75NF75 but also excels in several key parameters, providing an ideal solution for inverter power supply design. Firstly, the 100N08B demonstrates excellent electrical performance. Its maximum drain-to-source DC voltage (VDS) can reach up to 80V, with continuous drain current (ID) of 100A at TC=25°C and 68A at TC=100°C, meeting the demands of high current applications. Additionally, its static on-state resistance (RDS(ON)) is only 6.0~7.2mΩ, effectively reducing conduction losses and improving system efficiency. These parameters ensure stable and reliable operation of the 100N08B in inverter power supplies, guaranteeing efficient system operation. Secondly, the 100N08B also performs excellently in switching characteristics. Its turn-on delay time (td(on)) is only 28ns, rise time (tr) is 76ns, turn-off delay time (td(off)) is 128ns, and fall time (tf) is 51ns. These fast switching characteristics enable the 100N08B to perform exceptionally well in high-frequency switching applications, further enhancing the performance of the inverter power supply. Moreover, the 100N08B boasts excellent thermal performance and reliability. Its junction-to-case thermal resistance (Rth(j-c)) is only 0.62°C/W, and junction-to-ambient thermal resistance (Rth(j-A)) is 62.5°C/W, effectively reducing the operating temperature of the device and extending its service life. Additionally, the 100N08B has passed 100% avalanche testing, 100% thermal resistance testing, and 100% Rg testing, ensuring its stability and reliability under various harsh environments. In terms of cost control, the 100N08B also performs outstandingly. As one of the top domestic MOSFETs, the 100N08B strikes a perfect balance between performance and price, offering a cost-effective choice for inverter power supply design. Furthermore, as one of the key packaging bases for domestic high-power MOSFETs, Fei Hong Semiconductor provides a stable supply capacity and a comprehensive technical support system, ensuring customers have peace of mind during procurement and usage. In summary, the 100N08B FET from Fei Hong Semiconductor, with its excellent electrical performance, fast switching characteristics, superior thermal performance and reliability, as well as cost-effectiveness and stable supply capability, is an ideal choice for inverter power supply design. If you're struggling with FET selection, give Fei Hong Semiconductor's 100N08B a try—it may just be the solution you've been looking for. Take immediate action to optimize your inverter power supply design! Search for "Fei Hong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077, to learn more details and apply for free samples, experiencing the outstanding performance and stable reliability brought by the 100N08B.