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With both quality and performance, the FHA250N1F2An channel enhancement SGTMOSFET makes the DC/AC converter circuit design stand out.

Article Category:MOS transistor information Release time:2025-03-19 Number of page views:439 Share:
The increasing advancement of technology has promoted the gradual popularization of power electronic devices in various high-tech industries, with particular attention paid to industries such as DC/AC converters and laptop power supply systems. The demand for n-channel enhancement-mode SGTMOSFET devices that meet precise current control and regulation is becoming more urgent. In the circuit of a DC/AC converter, it is crucial to select a powerful pure domestic n-channel enhancement-mode SGTMOSFET device to replace the Infineon IPP030N10N3G model. Quality issues such as poor heat dissipation, electromagnetic interference, and low reliability of n-channel enhancement-mode SGTMOSFET can affect the normal operation of the DC/AC converter. Therefore, finding high-quality replacement products for n-channel enhancement-mode SGTMOSFET becomes important. When electronic technicians of DC/AC converters choose to replace the Infineon IPP030N10N3G model n-channel enhancement-mode SGTMOSFET, they need to carefully consider several key points. First, the performance parameters of the n-channel enhancement-mode SGTMOSFET are significant, such as whether the current can reach 250A and whether the rated voltage can reach 100V. These parameters are closely related to the efficiency of the device. It should be noted that the package type and off-state charge are also critical aspects. The parameters of 250A and 100V are the focus of Mr. Bao, an engineer at the DC/AC converter manufacturer, who is looking for a pure domestic n-channel enhancement-mode SGTMOSFET replacement manufacturer. He plans to find a n-channel enhancement-mode SGTMOSFET manufacturer with better quality. 1. Low gate charge 2. Current: 250A, Voltage: 100V 3. Maximum pulse drain current: 1000A 4. VGS (th): 2.0-4.0V 5. Maximum gate-source voltage: ±20V 6. Static on-resistance RDS(ON): 2.5mΩ (Typ), 3.0mΩ (Max) The decisive factor in improving the performance of the DC/AC converter circuit is the power switch capability. Feihong Semiconductor's FHA250N1F2A type n-channel enhancement-mode SGTMOSFET ensures the resolution of problems such as poor heat dissipation, electromagnetic interference, and low reliability with its strong parameters of 250A and 100V. DC/AC converter manufacturers choosing Feihong Semiconductor's n-channel enhancement-mode SGTMOSFET suppliers strive to provide the most suitable component supply guarantees for electronic manufacturers such as audio amplifiers and home energy storage power supplies. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

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