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New Trends in Circuit Design, Analysis of the Advantage Parameters of Pure Domestic FHP60N1F10A Medium and Low Voltage SGTMOSFET

Article Category:MOS transistor information Release time:2025-03-13 Number of page views:296 Share:
The rapid evolution of technology has driven the unstoppable application of power electronic converter devices in various industries, especially in fields such as DC/DC power converters and AC-DC switch power supplies. The demand for medium and low voltage SGTMOSFETs capable of precise current control and regulation is becoming increasingly urgent. In the circuit of a DC/DC power converter, choosing a leading domestic medium and low voltage SGTMOSFET device to replace the IPP126N10N3G model is very important. Currently, in the market for medium and low voltage SGTMOSFETs, the shortcomings of unstable performance include low heat dissipation capacity, product safety hazards, and low efficiency. These issues not only seriously affect the normal operation of DC/DC power converter equipment but also generate maintenance costs. Under this background, finding high-quality domestic replacement models for medium and low voltage SGTMOSFET products becomes particularly important. In the electronic engineering of DC/DC power converters, engineers must focus on the performance indicators when deciding on the IPP126N10N3G medium and low voltage SGTMOSFET. For example, whether the rated current meets 60A, whether the rated voltage reaches 100V, etc., these indicators are closely related to the device's work efficiency. Many national DC/DC power converter production factories have used FHP60N1F10A as a domestic alternative to IPP126N10N3G and can achieve large-scale promotion. It is recommended that everyone clearly understand its performance parameters: 1. Current: 60A, Voltage: 100V 2. Vgs: ±20V 3. N-channel field-effect transistor 4. Static on-resistance RDS(ON): 10.2mΩ (Typ), 12mΩ (Max) 5. Extremely low FOM(RDSON*Qg) 6. Threshold voltage: 2.0-4.0V To enhance the conversion current performance of the DC/DC power converter circuit, Feihong Semiconductor recommends using the FHP60N1F10A medium and low voltage SGTMOSFET. This 60A, 100V medium and low voltage SGTMOSFET can meet practical needs such as improving product heat dissipation capability, addressing product safety hazards, and improving efficiency. The development of electronic products like DC/DC power converters is no longer difficult, with Feihong Semiconductor's FHP60N1F10A medium and low voltage SGTMOSFET providing solutions for battery protection, buck-boost type DC/DC converters, etc. Reliable component supply, call 400-831-6077 now to experience the service!

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