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LED Driver Selection Substitute Daquan recommend
For BMS electronic engineers, when replacing the IPP041N04NG model n-channel enhancement mode MOSFET, they need to carefully select several key details. The first is the performance parameters of the n-channel enhancement mode MOSFET, such as whether the rated current can reach 200A and whether the voltage can reach 40V, etc., explaining that these parameters are closely related to the efficiency of the device.
FHS200N4F3A is an n-channel enhancement mode MOSFET product designed specifically for BMS electronic engineers with highly stringent requirements. It is technically compatible with IPP041N04NG, and detailed parameters can be found:
1. Maximum gate-source voltage: ±20V
2. Static on-resistance: 2.4mΩ (Typ), 3.1mΩ (Max)
3. 100% passed thermal resistance testing
4. Threshold voltage: 2.0-4.0V
5. N-channel field-effect transistor
6. Withstands 200A current and 40V voltage
Feihong Semiconductor strongly recommends using the FHS200N4F3A model n-channel enhancement mode MOSFET to enhance the power switching capability of BMS circuits. This n-channel enhancement mode MOSFET with rated parameters of 200A and 40V effectively solves practical problems such as electromagnetic noise and shortened product life.
Choosing the FHS200N4F3A model n-channel enhancement mode MOSFET from Feihong Semiconductor supports BMS manufacturers in resolving circuit development challenges and ensures stable component supply. Consultation hotline: 400-831-6077, free samples waiting for you!









