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To keep the advanced level, how to replace the international type number with FHS200N4F3A n-channel enhancement mode MOS tube?

Article Category:MOS transistor information Release time:2025-03-11 Number of page views:265 Share:
The acceleration of technological upgrades has increased the demand for high-performance power switch devices in various manufacturing industries. Especially in industries like BMS (Battery Management System) and inverter power supplies, there is an urgent need for devices such as n-channel enhancement mode MOSFETs that can precisely control and regulate current. In the design of BMS circuits, selecting a strong domestic n-channel enhancement mode MOSFET device to replace the IPP041N04NG model is quite critical. Common problems such as electromagnetic noise and shortened product life exist in n-channel enhancement mode MOSFET products on the market, which can directly affect the normal operation of BMS equipment. From this perspective, stable supply of high-quality n-channel enhancement mode MOSFETs is crucial for market dominance. For BMS electronic engineers, when replacing the IPP041N04NG model n-channel enhancement mode MOSFET, they need to carefully select several key details. The first is the performance parameters of the n-channel enhancement mode MOSFET, such as whether the rated current can reach 200A and whether the voltage can reach 40V, etc., explaining that these parameters are closely related to the efficiency of the device. FHS200N4F3A is an n-channel enhancement mode MOSFET product designed specifically for BMS electronic engineers with highly stringent requirements. It is technically compatible with IPP041N04NG, and detailed parameters can be found: 1. Maximum gate-source voltage: ±20V 2. Static on-resistance: 2.4mΩ (Typ), 3.1mΩ (Max) 3. 100% passed thermal resistance testing 4. Threshold voltage: 2.0-4.0V 5. N-channel field-effect transistor 6. Withstands 200A current and 40V voltage Feihong Semiconductor strongly recommends using the FHS200N4F3A model n-channel enhancement mode MOSFET to enhance the power switching capability of BMS circuits. This n-channel enhancement mode MOSFET with rated parameters of 200A and 40V effectively solves practical problems such as electromagnetic noise and shortened product life. Choosing the FHS200N4F3A model n-channel enhancement mode MOSFET from Feihong Semiconductor supports BMS manufacturers in resolving circuit development challenges and ensures stable component supply. Consultation hotline: 400-831-6077, free samples waiting for you!

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