The advancement of technology has led to an increasing demand for Insulated Gate Bipolar Transistors (IGBTs) in various engineering industries. Strictly speaking, in fields like lithium battery protection boards and isolated DC converters, there is an immediate need for devices such as field effect transistors that can achieve precise current control and regulation. In the circuit design of lithium battery protection boards, it is extremely important to select a reliable domestic field effect transistor device to replace the STP110N8F6 model. In the modern market of field effect transistors, many poor-quality products have the following disadvantages: low reliability, low heat dissipation efficiency, and decreased efficiency. These disadvantages not only seriously damage the normal operation of lithium battery protection board equipment but also lead to increased maintenance costs. From this perspective, finding an excellent quality replacement for the field effect transistor is extremely important. When selecting the STP110N8F6 model field effect transistor, electronic technicians of lithium battery protection boards must pay attention to its performance parameters, such as whether the current can reach 120A, whether the rated voltage can reach 85V, etc. These indicators are directly related to the working efficiency of the lithium battery protection board circuit. Additionally, charge-off quantity and charge-off quantity are key aspects. In the abundant lithium battery protection board industry nationwide, FHS100N8F6A has become an excellent alternative to STP110N8F6 and has already gained widespread implementation. Please check its detailed product parameters: 1. Static on-resistance RDS(ON): 5.3mΩ (Typ), 6.5mΩ (Max) 2. With 120A current and 85V voltage 3. Maximum forward pulse current: 320A 4. Maximum gate-source voltage: ±20V 5. N-channel enhancement mode field effect transistor 6. 100% passed thermal resistance testing To improve the power switch efficiency of the lithium battery protection board circuit, Fei Hong Semiconductor has launched the FHS100N8F6A type field effect transistor. With its superior parameters of 120A and 85V, it easily solves the problems of low product reliability, low heat dissipation efficiency, and decreased efficiency. Fei Hong Semiconductor's field effect transistor plan for lithium battery protection board manufacturers satisfies users, and their service attitude is professional. Subsequently, they will continue to purchase the FHS100N8F6A model field effect transistor. For more details, you can search "Fei Hong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!