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Reasons for adopting the domestic FHS200N4F3A low-voltage MOS tube to enhance circuit stability

Article Category:MOS transistor information Release time:2025-03-08 Number of page views:252 Share:
The increasing perfection of technology is driving the demand for Insulated Gate Bipolar Transistors (IGBT) in various departments and industries to grow continuously. The key lies in industries such as outdoor energy storage power supplies and agricultural spray irrigation systems, which have an urgent need for low-voltage MOSFETs capable of controlling and regulating current. In the circuit of outdoor energy storage power supplies, it becomes important to adopt a domestically produced low-voltage MOSFET device with stable performance to replace the IPP041N04NG model. In recent times, the low-voltage MOSFET market has been facing issues like poor safety benefits, low heat dissipation capability, and efficiency decline. These problems not only severely disrupt the normal operation of outdoor energy storage power supply equipment but also increase maintenance costs. Under this situation, finding a high-quality domestic replacement model for low-voltage MOSFETs becomes crucial. When using the IPP041N04NG low-voltage MOSFET model, outdoor energy storage power supply technicians must pay attention to its performance parameters, such as whether the rated current can reach 200A and the voltage whether it can reach 40V. These indicators significantly affect the work efficiency of the outdoor energy storage power supply circuit. Besides these, gate threshold voltage and package type are also priorities. In the international outdoor energy storage power supply industry, FHS200N4F3A has become an excellent alternative to IPP041N04NG and is already widely used. Please refer to its detailed product parameters: 1. Maximum pulse drain current: 800A 2. Vgs: ±20V 3. N-channel enhancement mode 4. 100% DVDS testing 5. Current capacity: 200A, Voltage: 40V 6. Threshold voltage VGS(th): 2.0-4.0V Quality first, long service life MOSFET! Feihong Semiconductor provides a solution for outdoor energy storage power supply factories: the FHS200N4F3A low-voltage MOSFET, with powerful parameters of 200A and 40V. It will effectively enhance the control ability of the outdoor energy storage power supply circuit and resolve issues related to poor safety benefits, low heat dissipation capability, and efficiency decline. The outdoor energy storage power supply circuit can use the domestically produced FHS200N4F3A low-voltage MOSFET model. Feihong Semiconductor's low-voltage MOSFET factory strives to provide component supply guarantees for electronic manufacturers of outdoor energy storage power supplies, lithium battery protection, portable power sources, etc. For more details, you can search "Feihong Semiconductor" on Baidu or call the free sample hotline: 400-831-6077!

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