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Excellent thermal performance, how to improve the stability of the lithium battery BMS protection board circuit for FHD60N1F10A MOSFET

Article Category:MOS transistor information Release time:2025-03-07 Number of page views:350 Share:
Which field effect transistor manufacturers can replace the SVG10120NAT model field effect transistor for use in the lithium battery BMS protection board circuit diagram? After all, the field effect transistor is a core aspect of the lithium battery BMS protection board. In today's era, the field effect transistor market often suffers from problems such as low efficiency, weak reliability, poor heat dissipation, and product safety hazards. These not only greatly affect the normal operation of the lithium battery BMS protection board equipment but also cause maintenance costs. In this situation, seeking high-quality field effect transistor replacement models is very important. When the electronic technician of the lithium battery BMS protection board replaces the SVG10120NAT model field effect transistor, several key factors need to be carefully selected. First, the performance parameters of the field effect transistor are urgently needed, such as whether the current can reach 60 amperes and whether the rated voltage can reach 100 volts. The aforementioned parameters are closely related to the device's work efficiency. Besides the above content, the Trench-FS technology and saturation voltage (VCE(sat)) cannot be ignored. Strong Trench-FS technology performance is suitable for enhancing the quality of the lithium battery BMS protection board. The manufacturer of the lithium battery BMS protection board previously used the SVG10120NAT model field effect transistor. At this time, it is necessary to seek out domestic field effect transistor manufacturers that can supply the FHD60N1F10A model field effect transistor for replacing the SVG10120NAT model field effect transistor in the lithium battery BMS protection board. 1. Static on-resistance RDS(ON): 10.2mΩ (Typ), 12mΩ (Max) 2. Current capability: 60A, Voltage capability: 100V 3. N-channel enhancement mode field effect transistor 4. Maximum continuous forward current: 60A 5. Extremely low input capacitance 6. Maximum gate-source voltage Vgs: ±20V You need to find the FHD60N1F10A model field effect transistor in Xinyu, Jiangxi, to enhance the performance of the lithium battery BMS protection board. Mr. Shao, the manager of the Xinyu lithium battery BMS protection board manufacturer, chose Flyhong Semiconductor due to their excellent service. To improve the power switch performance of the lithium battery BMS protection board circuit, Flyhong Semiconductor recommends selecting the FHD60N1F10A model field effect transistor. This field effect transistor with a rated current of 60A and a rated voltage of 100V can truly solve problems such as low product efficiency, weak reliability, poor heat dissipation, and product safety hazards. Selecting the FHD60N1F10A model field effect transistor from Flyhong Semiconductor helps the lithium battery BMS protection board company solve circuit development problems and ensures stable component supply. Consultation hotline: 400-831-6077, free samples waiting for you to take!

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