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The n-channel enhancement SGTMOSFET is used to build an efficient electric vehicle controller circuit: FHP120N9F4A and the international model SVG095R0NT alternative parameters

Article Category:MOS transistor information Release time:2025-02-27 Number of page views:293 Share:
The n-channel enhancement mode SGTMOSFET is the core of the electric vehicle controller. Which manufacturer of n-channel enhancement mode SGTMOSFET can provide a substitute for the SVG095R0NT model SGTMOSFET to be used in the circuit diagram of the electric vehicle controller? Currently, the n-channel enhancement mode SGTMOSFET market faces issues such as low efficiency, low reliability, and shortened product life span, which not only interfere with the normal operation of the electric vehicle controller equipment but also trigger maintenance costs. From this perspective, finding a high-quality substitute for the n-channel enhancement mode SGTMOSFET is very important. When replacing the SVG095R0NT model n-channel enhancement mode SGTMOSFET in the electric vehicle controller, the electronic engineers need to pay attention to the overall key characteristics. For example, the performance parameters of the n-channel enhancement mode SGTMOSFET, such as whether the current reaches 147A, whether the rated voltage reaches 97V, etc., are closely related to the device's operational efficiency. On this basis, the temperature coefficient and breakdown voltage (BVCES) are also important performance indicators. For engineers in the electric vehicle controller field, choosing the FHP120N9F4A n-channel enhancement mode SGTMOSFET product is like choosing a solution that precisely matches the technical parameters of the SVG095R0NT, allowing each user to carefully consider specific parameters: 1. Maximum continuous forward current: 120A 2. Static on-resistance RDS(ON): 4.8mΩ (Typ), 5.5mΩ (Max) 3. Has a current of 147A and a voltage of 97V 4. VGS(th): 2.3-3.8V 5. N-channel enhancement mode field-effect transistor 6. 100% passed UIS test 7. Vgs: ±20V The FHP120N9F4A model SGTMOSFET stabilizes control in the electric vehicle controller. To optimize the conversion current performance of the electric vehicle controller circuit, Feihong Semiconductor strongly recommends choosing the FHP120N9F4A model n-channel enhancement mode SGTMOSFET. This n-channel enhancement mode SGTMOSFET with a rated current of 147A and a rated voltage of 97V can effectively address issues such as low product efficiency, low reliability, and shortened product lifespan. Feihong Semiconductor's FHP120N9F4A model n-channel enhancement mode SGTMOSFET is trustworthy for solving circuit development problems for electronics companies. Applications such as automotive electronics and uninterruptible power supplies have guarantees. Welcome to consult 400-831-6077 for free sample services!

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