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Pure domestic精品,the excellent performance of FHD60N1F10A ultra-low on-resistance MOSFET is comparable to the global model STP80N10F.

Article Category:MOS transistor information Release time:2025-02-24 Number of page views:383 Share:
Because of the continuous optimization of technology, high-performance power switch devices have a growing influence in various industries. In fields like lithium-ion batteries and buck-boost converters, the main characters of lithium-ion batteries urgently need a device that can effectively control and regulate current - ultra-low Rds(on) MOSFETs. Choosing a powerful purely domestic ultra-low Rds(on) MOSFET device to replace the STP80N10F model is very important in the design of lithium-ion battery circuits. The quality issues of ultra-low Rds(on) MOSFETs, such as low reliability, low efficiency, poor heat dissipation capability, and product safety hazards, may affect the normal state of lithium-ion batteries. Therefore, finding a high-level replacement ultra-low Rds(on) MOSFET product is particularly important. When replacing the STP80N10F model ultra-low Rds(on) MOSFET, lithium-ion battery technicians need to carefully consider several key characteristics. First is the performance parameters of the ultra-low Rds(on) MOSFET, such as whether the current reaches 60A and voltage reaches 100V, which involve parameters related to the device's working efficiency. Lithium-ion battery manufacturers previously used the STP80N10F model MOSFET in their product circuits. Currently, it is hoped to discover a purely domestic ultra-low Rds(on) MOSFET manufacturer supplying the FHD60N1F10A model ultra-low Rds(on) MOSFET for use in replacing the STP80N10F model MOSFET in lithium-ion battery applications. 1. 60A current, 100V voltage 2. N-channel field-effect transistor 3. 100% passed thermal resistance test 4. Maximum continuous forward current: 60A 5. Maximum gate-source voltage Vgs: ±20V 6. Threshold voltage VGS(th): 2.0-4.0V In order to enhance the conversion current performance of the lithium-ion battery circuit, Feihong Semiconductor strongly recommends choosing the FHD60N1F10A ultra-low Rds(on) MOSFET. This ultra-low Rds(on) MOSFET with a rated current of 60A and a rated voltage of 100V can actually solve unknown problems such as low product reliability, low efficiency, poor heat dissipation capability, and product safety hazards. Choosing the FHD60N1F10A ultra-low Rds(on) MOSFET from Feihong Semiconductor can help lithium-ion battery factories resolve circuit development challenges and ensure stable supply of components. Consultation hotline: 400-831-6077, free samples waiting for you!

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