The continuous development of technology has promoted the increasingly widespread application of Insulated Gate Bipolar Transistor (IGBT) in various industries, especially in energy storage power supplies and buck-boost converters. There is an urgent need for ultra-low on-resistance MOSFETs that can precisely control and regulate current. In the circuit of energy storage power supply, selecting a unique domestic ultra-low on-resistance MOSFET device to replace the Infineon IPP030N10N3G model is very important. The current trend in the ultra-low on-resistance MOSFET market has common problems at the lower end of the product range: low heat dissipation capability and low reliability. These issues not only seriously damage the normal operation of energy storage power supply equipment but also cause maintenance costs. Under this background, finding high-quality ultra-low on-resistance MOSFETs to replace existing models is very important. When energy storage power supply electronic engineers select the ultra-low on-resistance MOSFET model of Infineon IPP030N10N3G for replacement, they need to pay special attention to its performance indicators, such as whether the current meets 250A, whether the voltage reaches 100V, etc. These indicators directly affect the efficiency of the device. It is worth noting that the saturation voltage drop and short-circuit tolerance (ShortCircuitCapability) are also key factors. If you are an energy storage power supply circuit engineer who needs a unique ultra-low on-resistance MOSFET product, FHS250N1F2A will be your best choice. Its technical performance is consistent with the Infineon IPP030N10N3G model. For more detailed parameters: 1. Maximum pulse drain current: 1000A 2. N-channel field-effect transistor 3. 100% avalanche tested 4. Threshold voltage VGS(th): 2.0-4.0V 5. Has 250A current, 100V voltage 6. Maximum gate-source voltage: ±20V In order to improve the conversion current efficiency of the energy storage power supply circuit, Feihong Semiconductor released the FHS250N1F2A type ultra-low on-resistance MOSFET. With its excellent parameters of 250A and 100V, it easily overcomes the problems of low heat dissipation capability and low reliability. Feihong Semiconductor's solution for ultra-low on-resistance MOSFETs for energy storage power supply enterprises has delighted people, and their service attitude is warm and thoughtful. They will continue to purchase the FHS250N1F2A type ultra-low on-resistance MOSFET in the long term. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!