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National premium products are not inferior to international brands. The FHN60N1F10LA ultra-low RDSON MOSFET achieves excellence in circuits.

Article Category:MOS transistor information Release time:2025-02-06 Number of page views:423 Share:
With the continuous prosperity of market share, the demand for ultra-low on-resistance MOSFETs in non-isolated DC-DC converters is increasing sharply. Non-isolated DC-DC converter operators are faced with the question of how to select an appropriate ultra-low on-resistance MOSFET for their circuit. The quality issues of ultra-low on-resistance MOSFETs, such as electromagnetic interference and low heat dissipation efficiency, can affect the reliable operation of non-isolated DC-DC converters. Thus, finding a higher-quality replacement model of ultra-low on-resistance MOSFET products becomes crucial. When replacing the AON6224 ultra-low on-resistance MOSFET, electronic engineers in the non-isolated DC-DC converter field need to pay attention to many important characteristics. As mentioned, the performance parameters of ultra-low on-resistance MOSFETs: whether the current can reach 60A, whether the rated voltage can reach 100V, etc., directly control the device's operating efficiency. In addition to the above, high reliability and switching frequency are also priorities. For engineers in the non-isolated DC-DC converter field, choosing the FHN60N1F10LA ultra-low on-resistance MOSFET product is equivalent to choosing a solution that matches the technical parameters of AON6224. Let us carefully focus on the detailed parameters: 1. N-channel enhancement mode 2. 100% EAS test 3. Current: 60A, Voltage: 100V 4. Threshold voltage VGS(th): 1.2-2.4V 5. Reverse transfer capacitance: 23pF 6. Maximum gate-source voltage: ±20V 7. Static on-resistance RDS(ON) (VGS=4.5V): 12.5mΩ (Typ), 15.5mΩ (Max) Feihong Semiconductor strongly recommends choosing the FHN60N1F10LA ultra-low on-resistance MOSFET to enhance the conversion current capability of the non-isolated DC-DC converter circuit. This 60A, 100V ultra-low on-resistance MOSFET is suitable for resolving practical problems such as electromagnetic interference and low heat dissipation efficiency. To solve circuit development problems for electronics manufacturing factories, Feihong Semiconductor's FHN60N1F10LA ultra-low on-resistance MOSFET is trustworthy. Applications such as audio amplifiers and EC motor drivers are guaranteed. Please call 400-831-6077 for free sample services!

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