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FHD120N7F6A Ultra-low RDS(on) MOSFET: Opening a New Chapter in Electronic Switch Circuit Design

Article Category:MOS transistor information Release time:2025-02-01 Number of page views:407 Share:
Owing to the continuous innovation of technology, power control and conversion devices are gradually becoming an indispensable part of various industry sectors. Areas such as electronic switches, home gaming consoles, and entertainment equipment have increasing demands for ultra-low RDS(on) MOSFETs, which are used to flexibly control and regulate current. When designing electronic switch circuits, it is crucial to select a domestic ultra-low RDS(on) MOSFET device to replace the HY1906 model. For the ultra-low RDS(on) MOSFET market, issues such as weak constant reliability, declining brand reputation, and low efficiency cannot be ignored. Ensuring the normal operation of electronic switch equipment requires finding the highest quality replacement ultra-low RDS(on) MOSFET products. When deciding to replace the HY1906 model ultra-low RDS(on) MOSFET, electronic technicians must carefully choose multiple important indicators. First, the performance parameters of the ultra-low RDS(on) MOSFET should be emphasized, such as whether the current can reach 120A and whether the voltage can reach 70V. These parameters directly affect the device's efficiency. Additionally, short-circuit capability (ShortCircuit Capability) and gate threshold voltage (VGE(th)) are also important components. Yin technician is searching for a domestic ultra-low RDS(on) MOSFET to replace the HY1906 model MOSFET. He aims to find an ultra-low RDS(on) MOSFET with 120A, 70V, and excellent quality. 1. Current: 120A, Voltage: 70V 2. Maximum forward pulse current: 480A 3. 100% DVDS test 4. RDS(ON): 5.4mΩ (Typ), 6.4mΩ (Max) 5. N-channel field-effect transistor 6. Vgs: ±20V Based on recommendations from idols, after learning that Feihong Semiconductor is a reliable ultra-low RDS(on) MOSFET factory in Shantou, the decision was made to use the FHD120N7F6A model ultra-low RDS(on) MOSFET in electronic switches. To upgrade the control efficiency of electronic switch circuits, Feihong Semiconductor has introduced the FHD120N7F6A type ultra-low RDS(on) MOSFET. With its superior parameters of 120A and 70V, it easily addresses issues of weak product reliability, declining brand reputation, and low efficiency. The development of electronic switches and other electronic products is no longer helpless, thanks to Feihong Semiconductor's FHD120N7F6A model ultra-low RDS(on) MOSFET, which provides solutions for inverters, mobile energy storage power supplies, etc. Stable component sourcing, so don't hesitate to call the 400-831-6077 sample hotline to experience the service!

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